Photosensitive n-TiN/p-Si heterostructures are fabricated by reactive magnetron sputtering. The heterostructures generate an open-circuit voltage of Voc = 0.4 V and a short-circuit current of Isc = 1.36 mA/cm2 under illumination at 80 mW/cm2. An analysis of the light current-voltage characteristic and quantum-yield spectrum demonstrate that the poor photoelectric parameters are due to recombination in the base region of the heterojunction and to the formation of a high-resistivity SiO2 layer on the surface of polycrystalline silicon, which fails to provide high-quality passivation of surface states.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics