Specific features of the recombination loss of the photocurrent in n-TiN/p-Si anisotype heterojunctions

M. N. Solovan, V. V. Brus, P. D. Maryanchuk

Research output: Contribution to journalArticlepeer-review

6 Citations (Scopus)

Abstract

Photosensitive n-TiN/p-Si heterostructures are fabricated by reactive magnetron sputtering. The heterostructures generate an open-circuit voltage of Voc = 0.4 V and a short-circuit current of Isc = 1.36 mA/cm2 under illumination at 80 mW/cm2. An analysis of the light current-voltage characteristic and quantum-yield spectrum demonstrate that the poor photoelectric parameters are due to recombination in the base region of the heterojunction and to the formation of a high-resistivity SiO2 layer on the surface of polycrystalline silicon, which fails to provide high-quality passivation of surface states.

Original languageEnglish
Pages (from-to)1504-1506
Number of pages3
JournalSemiconductors
Volume48
Issue number11
DOIs
Publication statusPublished - 2014
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics

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