The origin of low-frequency noise in resonant- tunneling diodes is investigated through spectral and time-domain characterizations over a wide range of temperatures and biasing conditions. The experiments were conducted on devices fabricated on GaAs/Al0.4Ga0.6.As material system. Detailed analyses on the temperature and bias dependences of the random telegraph noise and Lorentzian structures in the noise power spectral densities showed that the low-frequency excess noise arises from hopping conduction of electrons from the emitter to the quasi-bound states in the quantum well. The capture of an electron by a trap in the energy barrier causes fluctuations in the transmission coefficient of the electron due to the modulation of the barrier potential.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering