Spectral and Random Telegraph Noise Characterizations of Low-Frequency Fluctuations in GaAs/Al0.4Ga0.6As Resonant Tunneling Diodes

Charles Surya, Elliott R. Brown, Paul A. Maki, Sze Him Ng

Research output: Contribution to journalArticle

29 Citations (Scopus)

Abstract

The origin of low-frequency noise in resonant- tunneling diodes is investigated through spectral and time-domain characterizations over a wide range of temperatures and biasing conditions. The experiments were conducted on devices fabricated on GaAs/Al0.4Ga0.6.As material system. Detailed analyses on the temperature and bias dependences of the random telegraph noise and Lorentzian structures in the noise power spectral densities showed that the low-frequency excess noise arises from hopping conduction of electrons from the emitter to the quasi-bound states in the quantum well. The capture of an electron by a trap in the energy barrier causes fluctuations in the transmission coefficient of the electron due to the modulation of the barrier potential.

Original languageEnglish
Pages (from-to)2016-2022
Number of pages7
JournalIEEE Transactions on Electron Devices
Volume41
Issue number11
DOIs
Publication statusPublished - Jan 1 1994
Externally publishedYes

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Resonant tunneling diodes
Telegraph
Electrons
Energy barriers
Power spectral density
Semiconductor quantum wells
Modulation
Temperature
gallium arsenide
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Spectral and Random Telegraph Noise Characterizations of Low-Frequency Fluctuations in GaAs/Al0.4Ga0.6As Resonant Tunneling Diodes. / Surya, Charles; Brown, Elliott R.; Maki, Paul A.; Ng, Sze Him.

In: IEEE Transactions on Electron Devices, Vol. 41, No. 11, 01.01.1994, p. 2016-2022.

Research output: Contribution to journalArticle

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