Sputter-induced formation of an electron accumulation layer in In0.52Al0.48As

J. E. Maslar, P. W. Bohn, S. Agarwala, I. Adesida, C. Caneau, R. Bhat

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effects of Ar sputtering in In0.52Al0.48As were investigated employing photoluminescence (PL) and Raman spectroscopy. Ar is usually applied with ion beam-based dry processing methods or as a diluent with other InAlAs-etching gases. This investigation of Ar-sputtered material can therefore give insight into physical sputtering effects related with such processes. Based on the observations, Ar sputtering of InAlAs eventuated in significant structural and electrical modification. An augmentation in near-surface carrier density was noted. A complex dependence of PL intensity on plasma self-bias potential, incident laser irradiance, and InAlAs doping level was accounted in terms of competition between sputter-induced formation of nonradiative recombination centers and filling of an electron accumulation layer close to a defect-induced high carrier-density region at the surface.

Original languageEnglish
Pages (from-to)3575-3577
Number of pages3
JournalApplied Physics Letters
Volume64
Issue number26
DOIs
Publication statusPublished - Jan 1 1994
Externally publishedYes

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sputtering
photoluminescence
electrons
diluents
irradiance
Raman spectroscopy
ion beams
etching
augmentation
defects
gases
lasers

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Sputter-induced formation of an electron accumulation layer in In0.52Al0.48As. / Maslar, J. E.; Bohn, P. W.; Agarwala, S.; Adesida, I.; Caneau, C.; Bhat, R.

In: Applied Physics Letters, Vol. 64, No. 26, 01.01.1994, p. 3575-3577.

Research output: Contribution to journalArticle

Maslar, JE, Bohn, PW, Agarwala, S, Adesida, I, Caneau, C & Bhat, R 1994, 'Sputter-induced formation of an electron accumulation layer in In0.52Al0.48As', Applied Physics Letters, vol. 64, no. 26, pp. 3575-3577. https://doi.org/10.1063/1.111202
Maslar, J. E. ; Bohn, P. W. ; Agarwala, S. ; Adesida, I. ; Caneau, C. ; Bhat, R. / Sputter-induced formation of an electron accumulation layer in In0.52Al0.48As. In: Applied Physics Letters. 1994 ; Vol. 64, No. 26. pp. 3575-3577.
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