Abstract
Sputtering processes of silicon in the bombardment of highly charged ions (HCIs) are studied using molecular dynamics simulation. Assuming the potential energy of the HCI transferred to target is stored as the electrostatic energy of Si atoms ionized by the HCI, the Si ions up to 375 are embedded on a Si(1 0 0) surface as an initial condition, resulting in Coulomb explosion. The dynamics of particle ejection (sputtering) from the surface and crater formation on the surface are simulated. The formation and propagation of shock wave and rapid increase of the sputtering yield are seen during relaxation process. Strong dependence of the sputtering yield on the HCIs potential energy is found and discussed in comparison with experiment.
| Original language | English |
|---|---|
| Pages (from-to) | 436-441 |
| Number of pages | 6 |
| Journal | Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms |
| Volume | 212 |
| Issue number | 1-4 |
| DOIs | |
| Publication status | Published - Dec 2003 |
| Externally published | Yes |
Fingerprint
Keywords
- Coulomb explosion
- Electronic excitation
- Highly charged ion
- Molecular dynamics calculation
- Secondary ion emission
- Shock wave
- Sputtering
ASJC Scopus subject areas
- Surfaces, Coatings and Films
- Instrumentation
- Surfaces and Interfaces
Cite this
Sputtering due to Coulomb explosion in highly charged ion bombardment. / Terasawa, M.; Insepov, Z. A.; Sekioka, T.; Valuev, A. A.; Mitamura, T.
In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 212, No. 1-4, 12.2003, p. 436-441.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Sputtering due to Coulomb explosion in highly charged ion bombardment
AU - Terasawa, M.
AU - Insepov, Z. A.
AU - Sekioka, T.
AU - Valuev, A. A.
AU - Mitamura, T.
PY - 2003/12
Y1 - 2003/12
N2 - Sputtering processes of silicon in the bombardment of highly charged ions (HCIs) are studied using molecular dynamics simulation. Assuming the potential energy of the HCI transferred to target is stored as the electrostatic energy of Si atoms ionized by the HCI, the Si ions up to 375 are embedded on a Si(1 0 0) surface as an initial condition, resulting in Coulomb explosion. The dynamics of particle ejection (sputtering) from the surface and crater formation on the surface are simulated. The formation and propagation of shock wave and rapid increase of the sputtering yield are seen during relaxation process. Strong dependence of the sputtering yield on the HCIs potential energy is found and discussed in comparison with experiment.
AB - Sputtering processes of silicon in the bombardment of highly charged ions (HCIs) are studied using molecular dynamics simulation. Assuming the potential energy of the HCI transferred to target is stored as the electrostatic energy of Si atoms ionized by the HCI, the Si ions up to 375 are embedded on a Si(1 0 0) surface as an initial condition, resulting in Coulomb explosion. The dynamics of particle ejection (sputtering) from the surface and crater formation on the surface are simulated. The formation and propagation of shock wave and rapid increase of the sputtering yield are seen during relaxation process. Strong dependence of the sputtering yield on the HCIs potential energy is found and discussed in comparison with experiment.
KW - Coulomb explosion
KW - Electronic excitation
KW - Highly charged ion
KW - Molecular dynamics calculation
KW - Secondary ion emission
KW - Shock wave
KW - Sputtering
UR - http://www.scopus.com/inward/record.url?scp=0242306074&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0242306074&partnerID=8YFLogxK
U2 - 10.1016/S0168-583X(03)01497-6
DO - 10.1016/S0168-583X(03)01497-6
M3 - Article
VL - 212
SP - 436
EP - 441
JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
SN - 0168-583X
IS - 1-4
ER -