Sputtering due to Coulomb explosion in highly charged ion bombardment

M. Terasawa, Z. A. Insepov, T. Sekioka, A. A. Valuev, T. Mitamura

Research output: Contribution to journalConference article

12 Citations (Scopus)

Abstract

Sputtering processes of silicon in the bombardment of highly charged ions (HCIs) are studied using molecular dynamics simulation. Assuming the potential energy of the HCI transferred to target is stored as the electrostatic energy of Si atoms ionized by the HCI, the Si ions up to 375 are embedded on a Si(1 0 0) surface as an initial condition, resulting in Coulomb explosion. The dynamics of particle ejection (sputtering) from the surface and crater formation on the surface are simulated. The formation and propagation of shock wave and rapid increase of the sputtering yield are seen during relaxation process. Strong dependence of the sputtering yield on the HCIs potential energy is found and discussed in comparison with experiment.

Original languageEnglish
Pages (from-to)436-441
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume212
Issue number1-4
DOIs
Publication statusPublished - Dec 1 2003
EventAtomic Collisions in Solids - India, India
Duration: Jan 19 2003Jan 24 2003

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Keywords

  • Coulomb explosion
  • Electronic excitation
  • Highly charged ion
  • Molecular dynamics calculation
  • Secondary ion emission
  • Shock wave
  • Sputtering

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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