Stability of graphene-silicon heterostructure solar cells

V. V. Brus, M. A. Gluba, X. Zhang, K. Hinrichs, J. Rappich, N. H. Nickel

Research output: Contribution to journalArticlepeer-review

31 Citations (Scopus)

Abstract

The stability of undoped graphene-silicon heterostructure solar cells was investigated. Single-layer graphene was grown by chemical vapor deposition on copper foil. Prior to the transfer of graphene to the silicon wafer, the flat Si(111) surface was passivated with hydrogen or methyl groups (CH3). The conversion efficiency, η, of the H terminated Si device was negligible small (0.1%), whereas that of the CH3 passivated Si was 2 and 4.2% at 100 mW (AM 1.5) and 20 mW of light intensity, respectively. After 28 days in ambient atmosphere η decreased only slightly to 1.5 and 3.7%. This small change of η is due to the high stability of the CH3 passivated graphene-Si(111) interface. The methylated Si surface shows a high degree of chemical stability especially during the graphene transfer process.

Original languageEnglish
Pages (from-to)843-847
Number of pages5
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume211
Issue number4
DOIs
Publication statusPublished - Apr 2014
Externally publishedYes

Keywords

  • cells diodes
  • graphene
  • heterostructures
  • Schottky silicon
  • solar

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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