Stability of graphene-silicon heterostructure solar cells

V. V. Brus; M. A. Gluba; X. Zhang; K. Hinrichs; J. Rappich; N. H. Nickel

doi:10.1002/pssa.201330265

Stability of graphene-silicon heterostructure solar cells

V. V. Brus, M. A. Gluba, X. Zhang, K. Hinrichs, J. Rappich, N. H. Nickel

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

The stability of undoped graphene-silicon heterostructure solar cells was investigated. Single-layer graphene was grown by chemical vapor deposition on copper foil. Prior to the transfer of graphene to the silicon wafer, the flat Si(111) surface was passivated with hydrogen or methyl groups (CH₃). The conversion efficiency, η, of the H terminated Si device was negligible small (0.1%), whereas that of the CH₃ passivated Si was 2 and 4.2% at 100 mW (AM 1.5) and 20 mW of light intensity, respectively. After 28 days in ambient atmosphere η decreased only slightly to 1.5 and 3.7%. This small change of η is due to the high stability of the CH₃ passivated graphene-Si(111) interface. The methylated Si surface shows a high degree of chemical stability especially during the graphene transfer process.

Original language	English
Pages (from-to)	843-847
Number of pages	5
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	211
Issue number	4
DOIs	https://doi.org/10.1002/pssa.201330265
Publication status	Published - Apr 2014
Externally published	Yes

Keywords

cells diodes
graphene
heterostructures
Schottky silicon
solar

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Electrical and Electronic Engineering
Materials Chemistry

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title = "Stability of graphene-silicon heterostructure solar cells",

abstract = "The stability of undoped graphene-silicon heterostructure solar cells was investigated. Single-layer graphene was grown by chemical vapor deposition on copper foil. Prior to the transfer of graphene to the silicon wafer, the flat Si(111) surface was passivated with hydrogen or methyl groups (CH3). The conversion efficiency, η, of the H terminated Si device was negligible small (0.1%), whereas that of the CH3 passivated Si was 2 and 4.2% at 100 mW (AM 1.5) and 20 mW of light intensity, respectively. After 28 days in ambient atmosphere η decreased only slightly to 1.5 and 3.7%. This small change of η is due to the high stability of the CH3 passivated graphene-Si(111) interface. The methylated Si surface shows a high degree of chemical stability especially during the graphene transfer process.",

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AU - Brus, V. V.

AU - Gluba, M. A.

AU - Zhang, X.

AU - Hinrichs, K.

AU - Rappich, J.

AU - Nickel, N. H.

PY - 2014/4

Y1 - 2014/4

N2 - The stability of undoped graphene-silicon heterostructure solar cells was investigated. Single-layer graphene was grown by chemical vapor deposition on copper foil. Prior to the transfer of graphene to the silicon wafer, the flat Si(111) surface was passivated with hydrogen or methyl groups (CH3). The conversion efficiency, η, of the H terminated Si device was negligible small (0.1%), whereas that of the CH3 passivated Si was 2 and 4.2% at 100 mW (AM 1.5) and 20 mW of light intensity, respectively. After 28 days in ambient atmosphere η decreased only slightly to 1.5 and 3.7%. This small change of η is due to the high stability of the CH3 passivated graphene-Si(111) interface. The methylated Si surface shows a high degree of chemical stability especially during the graphene transfer process.

AB - The stability of undoped graphene-silicon heterostructure solar cells was investigated. Single-layer graphene was grown by chemical vapor deposition on copper foil. Prior to the transfer of graphene to the silicon wafer, the flat Si(111) surface was passivated with hydrogen or methyl groups (CH3). The conversion efficiency, η, of the H terminated Si device was negligible small (0.1%), whereas that of the CH3 passivated Si was 2 and 4.2% at 100 mW (AM 1.5) and 20 mW of light intensity, respectively. After 28 days in ambient atmosphere η decreased only slightly to 1.5 and 3.7%. This small change of η is due to the high stability of the CH3 passivated graphene-Si(111) interface. The methylated Si surface shows a high degree of chemical stability especially during the graphene transfer process.

KW - cells diodes

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KW - heterostructures

KW - Schottky silicon

KW - solar

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Stability of graphene-silicon heterostructure solar cells

Abstract

Keywords

ASJC Scopus subject areas

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