Stability of submicron AlGaN/GaN HEMT devices irradiated by gamma rays

S. Jha, Emil V. Jelenković, M. Pejović, G. S. Ristić, M. Pejović, K. Y. Tong, C. Surya, I. Bello, W. J. Zhang

Research output: Contribution to journalArticlepeer-review

26 Citations (Scopus)


AlGaN/GaN high electron mobility transistors (HEMTs) with 0.75 μm gate-length and incorporated C-doped GaN buffer layers have been exposed to gamma radiation. The devices have been irradiated to cumulative doses up to 107 rad. The effect of gamma irradiation on the direct current (DC) and low-frequency noise properties of these devices have been investigated in reference to the unexposed device. The DC and noise characteristics show deteriorating device performance upon the gamma exposure. However, some DC parameters, such as transconductance, tended to recover after the irradiation. The gate leakage current and low-frequency noise power spectra indicate this trend even couple of months after the irradiation.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalMicroelectronic Engineering
Issue number1
Publication statusPublished - Jan 1 2009
Externally publishedYes


  • AlGaN
  • Gamma irradiation
  • GaN
  • HEMT
  • Irradiation
  • Low-frequency noise
  • Noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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