TY - JOUR
T1 - Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions
AU - Parkhomenko, Hryhorii
AU - Solovan, Mykhaylo
AU - Brus, Viktor
AU - Maystruk, Eduard
AU - Maryanchuk, Pavlo
PY - 2018/1/1
Y1 - 2018/1/1
N2 - p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" I-V characteristics, we determined the open-circuit voltage Voc=0.42 V, the short-circuit current Isc=57.5 μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80 mW/cm2.
AB - p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" I-V characteristics, we determined the open-circuit voltage Voc=0.42 V, the short-circuit current Isc=57.5 μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80 mW/cm2.
KW - CdTe
KW - current transport
KW - heterojunction
KW - NiO
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U2 - 10.1117/1.OE.57.1.017116
DO - 10.1117/1.OE.57.1.017116
M3 - Article
AN - SCOPUS:85045832640
VL - 57
JO - Optical Engineering
JF - Optical Engineering
SN - 0091-3286
IS - 1
M1 - 017116
ER -