Structural, electrical, and photoelectric properties of p-NiO/n-CdTe heterojunctions

Hryhorii Parkhomenko, Mykhaylo Solovan, Viktor Brus, Eduard Maystruk, Pavlo Maryanchuk

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

p-NiO/n-CdTe-photosensitive heterojunctions were prepared by the deposition of nickel oxide thin films onto n-type single-crystal CdTe substrates by DC reactive magnetron sputtering. The analysis of capacitance-voltage (C-V) characteristics, measured at different frequencies of the small amplitude AC signal and corrected by the effect of the series resistance, provided evidence of the presence of electrically charged interface states, which significantly affect the measured capacitance. The dominant current transport mechanisms in the heterojunctions were determined at forward and reverse biases. Using "light" I-V characteristics, we determined the open-circuit voltage Voc=0.42 V, the short-circuit current Isc=57.5 μA/cm2, and the fill factor FF=0.24 under white light illumination with the intensity of 80 mW/cm2.

Original languageEnglish
Article number017116
JournalOptical Engineering
Volume57
Issue number1
DOIs
Publication statusPublished - Jan 1 2018
Externally publishedYes

Keywords

  • CdTe
  • current transport
  • heterojunction
  • NiO

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics
  • Engineering(all)

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