TY - JOUR
T1 - Structural modification in reactive-ion-etched i-InP and n+-InP studied by Raman scattering
AU - Maslar, J. E.
AU - Bohn, P. W.
AU - Ballegeer, D. G.
AU - Andideh, E.
AU - Adesida, I.
AU - Caneau, C.
AU - Bhat, R.
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Structural and electrical property modifications in i-InP and n +-InP by reactive ion etching have been characterized by using Raman scattering to observe changes in the positions and intensities of intrinsic phonons and coupled phonon-plasmon bands. Different etch gas compositions (Ar, He, CH4/H2, CH4/Ar, CH4/He, and CH4/H2/Ar), bias potentials (0-500 V), and etch times were examined. Electrical property changes were followed by correlating results with a one-sided abrupt junction model. Ar and He, which interact with the material by physical sputtering processes, were found to induce the greatest structural and electrical modifications. Ar-etched samples exhibited the greatest structural modification, with evidence of structural damage coming from far beyond the calculated penetration depth of low-energy Ar+, while samples etched in methane-based plasmas showed very little structural perturbation. Etching in all of the gas mixtures used produced some degree of electrical modification in n+-InP, with He plasmas causing the most significant changes. In general, samples etched with lower ion energies and sputter components exhibited the least structural and electrical modification.
AB - Structural and electrical property modifications in i-InP and n +-InP by reactive ion etching have been characterized by using Raman scattering to observe changes in the positions and intensities of intrinsic phonons and coupled phonon-plasmon bands. Different etch gas compositions (Ar, He, CH4/H2, CH4/Ar, CH4/He, and CH4/H2/Ar), bias potentials (0-500 V), and etch times were examined. Electrical property changes were followed by correlating results with a one-sided abrupt junction model. Ar and He, which interact with the material by physical sputtering processes, were found to induce the greatest structural and electrical modifications. Ar-etched samples exhibited the greatest structural modification, with evidence of structural damage coming from far beyond the calculated penetration depth of low-energy Ar+, while samples etched in methane-based plasmas showed very little structural perturbation. Etching in all of the gas mixtures used produced some degree of electrical modification in n+-InP, with He plasmas causing the most significant changes. In general, samples etched with lower ion energies and sputter components exhibited the least structural and electrical modification.
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U2 - 10.1063/1.353031
DO - 10.1063/1.353031
M3 - Article
AN - SCOPUS:0042046064
VL - 73
SP - 2983
EP - 2994
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 6
ER -