Structural, optical and electrical properties of Cu2ZnSnS4 films prepared from a non-toxic DMSO-based sol-gel and synthesized in low vacuum

I. G. Orletskyi, M. M. Solovan, V. V. Brus, F. Pinna, G. Cicero, P. D. Maryanchuk, E. V. Maistruk, M. I. Ilashchuk, T. I. Boichuk, E. Tresso

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)

Abstract

This paper reports a complex analysis of structural, optical and electrical properties of Cu2ZnSnS4 (CZTS) films, prepared by spin-coating of a sol-gel based on the low-cost and environmentally friendly solvent dimethyl sulfoxide (DMSO) and synthesized in low vacuum (0.1 Pa). The effect of a short-term low-temperature treatment in air and final annealing under low vacuum (0.1 Pa) on the synthesis of CZTS films was tested and analyzed. XRD and Raman spectra have shown the polycrystalline nature of obtained CZTS films with almost a pure kesterite phase content. The average size of crystallites D~60 nm in the films was estimated. The value of the band gap Eg≈1.53 eV was determined from the analysis of optical characteristics. The analysis of electrical characteristics was carried out in the scope of the model of current transport in polycrystalline materials with electrically active grain boundaries. The determined values of the specific resistance ρ≈2.38 Ω cm, the hole density p0≈4.2×1018 cm−3 and the effective mobility μp≈0.63 cm2/(V s) demonstrate that the CZTS films under investigation are prospective for the fabrication of highly efficient solar cells.

Original languageEnglish
Pages (from-to)154-160
Number of pages7
JournalJournal of Physics and Chemistry of Solids
Volume100
DOIs
Publication statusPublished - Jan 1 2017
Externally publishedYes

Keywords

  • Current transport
  • CZTS
  • Raman
  • Thin films
  • XRD

ASJC Scopus subject areas

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

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