We report on low-frequency noise studies of strained-layer In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes over a frequency range of 10 Hz-100 kHz and a temperature range of 77-293 K. The noise was found to be dominated by flicker ( 1 fγ) noise for frequencies below 10 kHz, with the frequency exponent γ varying from 0.75 to 1.1 over temperature. Our results indicate that the 1 fγ noise originates from thermal activation of electrons from the conduction band to interface states at the heterojunctions, with a distribution of activation energy that peaks at about 0.27 eV.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry