Studies of flicker noise in In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes

Sze Him Ng, Charles Surya

Research output: Contribution to journalArticlepeer-review

7 Citations (Scopus)

Abstract

We report on low-frequency noise studies of strained-layer In0.53Ga0.47As/AlAs/InAs resonant tunneling diodes over a frequency range of 10 Hz-100 kHz and a temperature range of 77-293 K. The noise was found to be dominated by flicker ( 1 fγ) noise for frequencies below 10 kHz, with the frequency exponent γ varying from 0.75 to 1.1 over temperature. Our results indicate that the 1 fγ noise originates from thermal activation of electrons from the conduction band to interface states at the heterojunctions, with a distribution of activation energy that peaks at about 0.27 eV.

Original languageEnglish
Pages (from-to)1213-1216
Number of pages4
JournalSolid State Electronics
Volume35
Issue number9
DOIs
Publication statusPublished - Jan 1 1992
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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