Studies of high DC current induced degradation in III-V nitride based heterojunctions

W. Y. Ho, Charles Surya, K. Y. Tong, L. W. Lu, W. K. Ge

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We report experiments on high dc current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electroluminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 10 13 cm -3 to 4.2 × 10 13 cm -3 at E 1 = E C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.

Original languageEnglish
Pages (from-to)1421-1425
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume47
Issue number7
DOIs
Publication statusPublished - Jul 1 2000
Externally publishedYes

Fingerprint

Induced currents
Electroluminescence
Nitrides
nitrides
Heterojunctions
heterojunctions
direct current
traps
Spectroscopy
degradation
Degradation
electroluminescence
Deep level transient spectroscopy
high current
Electric potential
Power spectrum
Electron energy levels
Light emitting diodes
flicker
Experiments

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Studies of high DC current induced degradation in III-V nitride based heterojunctions. / Ho, W. Y.; Surya, Charles; Tong, K. Y.; Lu, L. W.; Ge, W. K.

In: IEEE Transactions on Electron Devices, Vol. 47, No. 7, 01.07.2000, p. 1421-1425.

Research output: Contribution to journalArticle

Ho, W. Y. ; Surya, Charles ; Tong, K. Y. ; Lu, L. W. ; Ge, W. K. / Studies of high DC current induced degradation in III-V nitride based heterojunctions. In: IEEE Transactions on Electron Devices. 2000 ; Vol. 47, No. 7. pp. 1421-1425.
@article{4a925f53b4c6422bb11e97b6721c0b13,
title = "Studies of high DC current induced degradation in III-V nitride based heterojunctions",
abstract = "We report experiments on high dc current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electroluminescence of the devices exhibited a 25{\%} decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 10 13 cm -3 to 4.2 × 10 13 cm -3 at E 1 = E C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.",
author = "Ho, {W. Y.} and Charles Surya and Tong, {K. Y.} and Lu, {L. W.} and Ge, {W. K.}",
year = "2000",
month = "7",
day = "1",
doi = "10.1109/16.848286",
language = "English",
volume = "47",
pages = "1421--1425",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "7",

}

TY - JOUR

T1 - Studies of high DC current induced degradation in III-V nitride based heterojunctions

AU - Ho, W. Y.

AU - Surya, Charles

AU - Tong, K. Y.

AU - Lu, L. W.

AU - Ge, W. K.

PY - 2000/7/1

Y1 - 2000/7/1

N2 - We report experiments on high dc current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electroluminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 10 13 cm -3 to 4.2 × 10 13 cm -3 at E 1 = E C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.

AB - We report experiments on high dc current stressing in commercial III-V nitride based heterojunction light-emitting diodes. Stressing currents ranging from 100 mA to 200 mA were used. Degradations in the device properties were investigated through detailed studies of the current-voltage (I-V) characteristics, electroluminescence, deep-level transient Fourier spectroscopy and flicker noise. Our experimental data demonstrated significant distortions in the I-V characteristics subsequent to electrical stressing. The room temperature electroluminescence of the devices exhibited a 25% decrement in the peak emission intensity. Concentration of the deep-levels was examined by deep-level transient Fourier spectroscopy, which indicated an increase in the density of deep-traps from 2.7 × 10 13 cm -3 to 4.2 × 10 13 cm -3 at E 1 = E C - 1.1 eV. The result is consistent with our study of 1/f noise, which exhibited up to three orders of magnitude increase in the voltage noise power spectra. These traps are typically located at energy levels beyond the range that can be characterized by conventional techniques including DLTS. The two experiments, therefore, provide a more complete picture of trap generation due to high dc current stressing.

UR - http://www.scopus.com/inward/record.url?scp=0034227585&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0034227585&partnerID=8YFLogxK

U2 - 10.1109/16.848286

DO - 10.1109/16.848286

M3 - Article

VL - 47

SP - 1421

EP - 1425

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 7

ER -