Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths

S. K. Jha, B. H. Leung, C. Surya, H. Schweizer, M. H. Pilkhuhn

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

Hot-electron injection experiments were performed on Al 0.2GaN0.8/GaN HEMTs with different gate recess depths formed by reactive ion etching. Flicker noise measured from the devices indicate systematic increase in Sv(f) for devices with increasing recess depths. Furthermore, when the devices were subjected to high dc voltage stress across the conduction channel, the devices with large gate recess were found to exhibit much more significant increase in Sv(f) compared to the control device with no gate recess. Since SV(f) is directly proportional to the trap density at the AlGaN/GaN heterointerface, the experimental data clearly show that the reactive ion etching process has led to significant degradation in the integrity of the device.

Original languageEnglish
Title of host publicationCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings
Pages33-36
Number of pages4
DOIs
Publication statusPublished - Dec 1 2005
Externally publishedYes
EventCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices - Bribane, QLD, Australia
Duration: Dec 8 2004Dec 10 2004

Conference

ConferenceCOMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices
CountryAustralia
CityBribane, QLD
Period12/8/0412/10/04

Fingerprint

Hot electrons
Reactive ion etching
High electron mobility transistors
Degradation
Electron injection
Electric potential
Experiments
aluminum gallium nitride

Keywords

  • Flicker noise
  • GaN
  • Gate recess
  • HEMTs
  • Hot-electron degradation

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

Cite this

Jha, S. K., Leung, B. H., Surya, C., Schweizer, H., & Pilkhuhn, M. H. (2005). Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings (pp. 33-36). [1577485] https://doi.org/10.1109/COMMAD.2004.1577485

Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths. / Jha, S. K.; Leung, B. H.; Surya, C.; Schweizer, H.; Pilkhuhn, M. H.

COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 33-36 1577485.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Jha, SK, Leung, BH, Surya, C, Schweizer, H & Pilkhuhn, MH 2005, Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths. in COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings., 1577485, pp. 33-36, COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices, Bribane, QLD, Australia, 12/8/04. https://doi.org/10.1109/COMMAD.2004.1577485
Jha SK, Leung BH, Surya C, Schweizer H, Pilkhuhn MH. Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths. In COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. p. 33-36. 1577485 https://doi.org/10.1109/COMMAD.2004.1577485
Jha, S. K. ; Leung, B. H. ; Surya, C. ; Schweizer, H. ; Pilkhuhn, M. H. / Studies of hot-electron degradation in GaN HEMTs with varying gate recess depths. COMMAD04 - 2004 Conference on Optoelectronic and Microelectronic Materials and Devices -Proceedings. 2005. pp. 33-36
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