Study of 1/f noise in hydrogenated amorphous silicon thin films

W. Y. Ho, Charles Surya

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We report a study of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device was first annealed at 450 K and then cooled to room temperature at a rate of ∼0.5 K s-1. The voltage noise power spectra and the conductance of the device were characterized from room temperature to 420 K. The experiment was then repeated with the device annealed again and subsequently cooled at a rate of ∼0.02 K s-1. The Arrhenius plots of the voltage noise power spectrum, Sv(f), are found to exhibit thermal equilibration processes commonly observed in a-Si:H materials. Characterization of the bias dependencies of the noise show that Sv(f) deviates from an P dependence indicating that the noise arises from a non-linear process. Also, Sv(f) is proportional to Rp where p is dependent on the temperature and the cooling process of the device. Our experimental data provide strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.

Original languageEnglish
Pages (from-to)1247-1249
Number of pages3
JournalSolid-State Electronics
Volume41
Issue number9
DOIs
Publication statusPublished - Jan 1 1997
Externally publishedYes

Fingerprint

Amorphous silicon
amorphous silicon
Thin films
thin films
Power spectrum
flicker
noise spectra
Arrhenius plots
Temperature
power spectra
Electric potential
room temperature
Hydrogen
electric potential
Cooling
plots
cooling
causes
Experiments
hydrogen

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Study of 1/f noise in hydrogenated amorphous silicon thin films. / Ho, W. Y.; Surya, Charles.

In: Solid-State Electronics, Vol. 41, No. 9, 01.01.1997, p. 1247-1249.

Research output: Contribution to journalArticle

@article{f8a4c73b98004e9890837ceee15aa2c4,
title = "Study of 1/f noise in hydrogenated amorphous silicon thin films",
abstract = "We report a study of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device was first annealed at 450 K and then cooled to room temperature at a rate of ∼0.5 K s-1. The voltage noise power spectra and the conductance of the device were characterized from room temperature to 420 K. The experiment was then repeated with the device annealed again and subsequently cooled at a rate of ∼0.02 K s-1. The Arrhenius plots of the voltage noise power spectrum, Sv(f), are found to exhibit thermal equilibration processes commonly observed in a-Si:H materials. Characterization of the bias dependencies of the noise show that Sv(f) deviates from an P dependence indicating that the noise arises from a non-linear process. Also, Sv(f) is proportional to Rp where p is dependent on the temperature and the cooling process of the device. Our experimental data provide strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.",
author = "Ho, {W. Y.} and Charles Surya",
year = "1997",
month = "1",
day = "1",
doi = "10.1016/S0038-1101(97)00073-7",
language = "English",
volume = "41",
pages = "1247--1249",
journal = "Solid-State Electronics",
issn = "0038-1101",
publisher = "Elsevier",
number = "9",

}

TY - JOUR

T1 - Study of 1/f noise in hydrogenated amorphous silicon thin films

AU - Ho, W. Y.

AU - Surya, Charles

PY - 1997/1/1

Y1 - 1997/1/1

N2 - We report a study of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device was first annealed at 450 K and then cooled to room temperature at a rate of ∼0.5 K s-1. The voltage noise power spectra and the conductance of the device were characterized from room temperature to 420 K. The experiment was then repeated with the device annealed again and subsequently cooled at a rate of ∼0.02 K s-1. The Arrhenius plots of the voltage noise power spectrum, Sv(f), are found to exhibit thermal equilibration processes commonly observed in a-Si:H materials. Characterization of the bias dependencies of the noise show that Sv(f) deviates from an P dependence indicating that the noise arises from a non-linear process. Also, Sv(f) is proportional to Rp where p is dependent on the temperature and the cooling process of the device. Our experimental data provide strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.

AB - We report a study of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device was first annealed at 450 K and then cooled to room temperature at a rate of ∼0.5 K s-1. The voltage noise power spectra and the conductance of the device were characterized from room temperature to 420 K. The experiment was then repeated with the device annealed again and subsequently cooled at a rate of ∼0.02 K s-1. The Arrhenius plots of the voltage noise power spectrum, Sv(f), are found to exhibit thermal equilibration processes commonly observed in a-Si:H materials. Characterization of the bias dependencies of the noise show that Sv(f) deviates from an P dependence indicating that the noise arises from a non-linear process. Also, Sv(f) is proportional to Rp where p is dependent on the temperature and the cooling process of the device. Our experimental data provide strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.

UR - http://www.scopus.com/inward/record.url?scp=0031234550&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0031234550&partnerID=8YFLogxK

U2 - 10.1016/S0038-1101(97)00073-7

DO - 10.1016/S0038-1101(97)00073-7

M3 - Article

VL - 41

SP - 1247

EP - 1249

JO - Solid-State Electronics

JF - Solid-State Electronics

SN - 0038-1101

IS - 9

ER -