Abstract
We report a study of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device was first annealed at 450 K and then cooled to room temperature at a rate of ∼0.5 K s-1. The voltage noise power spectra and the conductance of the device were characterized from room temperature to 420 K. The experiment was then repeated with the device annealed again and subsequently cooled at a rate of ∼0.02 K s-1. The Arrhenius plots of the voltage noise power spectrum, Sv(f), are found to exhibit thermal equilibration processes commonly observed in a-Si:H materials. Characterization of the bias dependencies of the noise show that Sv(f) deviates from an P dependence indicating that the noise arises from a non-linear process. Also, Sv(f) is proportional to Rp where p is dependent on the temperature and the cooling process of the device. Our experimental data provide strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.
| Original language | English |
|---|---|
| Pages (from-to) | 1247-1249 |
| Number of pages | 3 |
| Journal | Solid-State Electronics |
| Volume | 41 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - Jan 1 1997 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
Cite this
Study of 1/f noise in hydrogenated amorphous silicon thin films. / Ho, W. Y.; Surya, Charles.
In: Solid-State Electronics, Vol. 41, No. 9, 01.01.1997, p. 1247-1249.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Study of 1/f noise in hydrogenated amorphous silicon thin films
AU - Ho, W. Y.
AU - Surya, Charles
PY - 1997/1/1
Y1 - 1997/1/1
N2 - We report a study of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device was first annealed at 450 K and then cooled to room temperature at a rate of ∼0.5 K s-1. The voltage noise power spectra and the conductance of the device were characterized from room temperature to 420 K. The experiment was then repeated with the device annealed again and subsequently cooled at a rate of ∼0.02 K s-1. The Arrhenius plots of the voltage noise power spectrum, Sv(f), are found to exhibit thermal equilibration processes commonly observed in a-Si:H materials. Characterization of the bias dependencies of the noise show that Sv(f) deviates from an P dependence indicating that the noise arises from a non-linear process. Also, Sv(f) is proportional to Rp where p is dependent on the temperature and the cooling process of the device. Our experimental data provide strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.
AB - We report a study of flicker noise in n-type hydrogenated amorphous silicon (a-Si:H) resistive devices from room temperature to about 420 K. The device was first annealed at 450 K and then cooled to room temperature at a rate of ∼0.5 K s-1. The voltage noise power spectra and the conductance of the device were characterized from room temperature to 420 K. The experiment was then repeated with the device annealed again and subsequently cooled at a rate of ∼0.02 K s-1. The Arrhenius plots of the voltage noise power spectrum, Sv(f), are found to exhibit thermal equilibration processes commonly observed in a-Si:H materials. Characterization of the bias dependencies of the noise show that Sv(f) deviates from an P dependence indicating that the noise arises from a non-linear process. Also, Sv(f) is proportional to Rp where p is dependent on the temperature and the cooling process of the device. Our experimental data provide strong evidence that the flicker noise originates from hydrogen motion within the material. The process appears to cause fluctuations in the device conductance by modulating the percolation path of the carriers.
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U2 - 10.1016/S0038-1101(97)00073-7
DO - 10.1016/S0038-1101(97)00073-7
M3 - Article
AN - SCOPUS:0031234550
VL - 41
SP - 1247
EP - 1249
JO - Solid-State Electronics
JF - Solid-State Electronics
SN - 0038-1101
IS - 9
ER -