Study of 1/f noise in III-V nitride based MODFETs at low drain bias

W. Ho, C. Surya, K. Y. Tong, W. Kim, A. Botcharev, H. Morkoc

Research output: Contribution to conferencePaper

1 Citation (Scopus)

Abstract

Flicker noise in MBE grown III-V nitride MODFETs was characterized from room temperature to 130K. The voltage noise power spectra, SV(f), were found to be proportional to 1/fgamma where γ depends on the device temperature as well as the gate bias. Study of SV(f) as a function of the biasing condition was conducted in detail and were found to vary as VG 2/(VG-VT)β where β is a function of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.

Original languageEnglish
Pages130-133
Number of pages4
Publication statusPublished - Dec 1 1999
Externally publishedYes
Event1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99) - Shatin, Hong Kong
Duration: Jun 26 1999Jun 26 1999

Conference

Conference1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99)
CityShatin, Hong Kong
Period6/26/996/26/99

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ASJC Scopus subject areas

  • Engineering(all)

Cite this

Ho, W., Surya, C., Tong, K. Y., Kim, W., Botcharev, A., & Morkoc, H. (1999). Study of 1/f noise in III-V nitride based MODFETs at low drain bias. 130-133. Paper presented at 1999 IEEE Hong Kong Electron Devices Meeting (HKEDM99), Shatin, Hong Kong, .