Study of 1/f noise in III-V nitride based MODFETs at low drain bias

W. Ho; C. Surya; K. Y. Tong; W. Kim; A. Botcharev; H. Morkoç

Study of 1/f noise in III-V nitride based MODFETs at low drain bias

W. Ho, C. Surya, K. Y. Tong, W. Kim, A. Botcharev, H. Morkoç

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Flicker noise in III-V nitride MODFETs was characterized from room temperature to 130K. The voltage noise power spectra, Sv(f), were found to be proportional to 1/fy where r depends on the device temperature as well as the gate bias. Study of Sv(f) as a function of the biasing condition was conducted in detail and were found to vary as v_G² (V_G-v_r)^β where β3 is a jUnction of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.

Original language	English
Title of host publication	ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
Editors	A. Touboul, Y. Danto, H. Grunbacher
Publisher	IEEE Computer Society
Pages	420-423
Number of pages	4
ISBN (Electronic)	2863322346
Publication status	Published - Jan 1 1998
Externally published	Yes
Event	28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France Duration: Sep 8 1998 → Sep 10 1998

Publication series

Name	European Solid-State Device Research Conference
ISSN (Print)	1930-8876

Conference

Conference	28th European Solid-State Device Research Conference, ESSDERC 1998
Country	France
City	Bordeaux
Period	9/8/98 → 9/10/98

ASJC Scopus subject areas

Electrical and Electronic Engineering
Safety, Risk, Reliability and Quality

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Cite this

Ho, W., Surya, C., Tong, K. Y., Kim, W., Botcharev, A., & Morkoç, H. (1998). Study of 1/f noise in III-V nitride based MODFETs at low drain bias. In A. Touboul, Y. Danto, & H. Grunbacher (Eds.), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference (pp. 420-423). [1503578] (European Solid-State Device Research Conference). IEEE Computer Society.

Study of 1/f noise in III-V nitride based MODFETs at low drain bias. / Ho, W.; Surya, C.; Tong, K. Y.; Kim, W.; Botcharev, A.; Morkoç, H.

ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. ed. / A. Touboul; Y. Danto; H. Grunbacher. IEEE Computer Society, 1998. p. 420-423 1503578 (European Solid-State Device Research Conference).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Ho, W, Surya, C, Tong, KY, Kim, W, Botcharev, A & Morkoç, H 1998, Study of 1/f noise in III-V nitride based MODFETs at low drain bias. in A Touboul, Y Danto & H Grunbacher (eds), ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference., 1503578, European Solid-State Device Research Conference, IEEE Computer Society, pp. 420-423, 28th European Solid-State Device Research Conference, ESSDERC 1998, Bordeaux, France, 9/8/98.

Ho, W. ; Surya, C. ; Tong, K. Y. ; Kim, W. ; Botcharev, A. ; Morkoç, H. / Study of 1/f noise in III-V nitride based MODFETs at low drain bias. ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference. editor / A. Touboul ; Y. Danto ; H. Grunbacher. IEEE Computer Society, 1998. pp. 420-423 (European Solid-State Device Research Conference).

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abstract = "Flicker noise in III-V nitride MODFETs was characterized from room temperature to 130K. The voltage noise power spectra, Sv(f), were found to be proportional to 1/fy where r depends on the device temperature as well as the gate bias. Study of Sv(f) as a function of the biasing condition was conducted in detail and were found to vary as vG2 (VG-vr)β where β3 is a jUnction of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.",

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