Study of 1/f noise in III-V nitride based MODFETs at low drain bias

W. Ho, C. Surya, K. Y. Tong, W. Kim, A. Botcharev, H. Morkoç

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Flicker noise in III-V nitride MODFETs was characterized from room temperature to 130K. The voltage noise power spectra, Sv(f), were found to be proportional to 1/fy where r depends on the device temperature as well as the gate bias. Study of Sv(f) as a function of the biasing condition was conducted in detail and were found to vary as vG2 (VG-vr)β where β3 is a jUnction of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.

Original languageEnglish
Title of host publicationESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference
EditorsA. Touboul, Y. Danto, H. Grunbacher
PublisherIEEE Computer Society
Pages420-423
Number of pages4
ISBN (Electronic)2863322346
Publication statusPublished - Jan 1 1998
Externally publishedYes
Event28th European Solid-State Device Research Conference, ESSDERC 1998 - Bordeaux, France
Duration: Sep 8 1998Sep 10 1998

Publication series

NameEuropean Solid-State Device Research Conference
ISSN (Print)1930-8876

Conference

Conference28th European Solid-State Device Research Conference, ESSDERC 1998
CountryFrance
CityBordeaux
Period9/8/989/10/98

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Safety, Risk, Reliability and Quality

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