@inproceedings{c7b6f0031a5b4a598901bc7784de93a1,
title = "Study of 1/f noise in III-V nitride based MODFETs at low drain bias",
abstract = "Flicker noise in III-V nitride MODFETs was characterized from room temperature to 130K. The voltage noise power spectra, Sv(f), were found to be proportional to 1/fy where r depends on the device temperature as well as the gate bias. Study of Sv(f) as a function of the biasing condition was conducted in detail and were found to vary as vG2 (VG-vr)β where β3 is a jUnction of temperature. Analyses of the data showed that the noise originated from thermal activation of carriers to localized states in the channel area. The experimental data indicated that number fluctuations was not a major factor in the observed noise. However, more work is needed to determine if surface mobility fluctuations played a key role in the 1/f noise.",
author = "W. Ho and C. Surya and Tong, {K. Y.} and W. Kim and A. Botcharev and H. Morko{\c c}",
year = "1998",
month = jan,
day = "1",
language = "English",
series = "European Solid-State Device Research Conference",
publisher = "IEEE Computer Society",
pages = "420--423",
editor = "A. Touboul and Y. Danto and H. Grunbacher",
booktitle = "ESSDERC 1998 - Proceedings of the 28th European Solid-State Device Research Conference",
address = "United States",
note = "28th European Solid-State Device Research Conference, ESSDERC 1998 ; Conference date: 08-09-1998 Through 10-09-1998",
}