Study of chemically assisted ion beam etching of GaN using HCl gas

A. T. Ping, I. Adesida, M. Asif Khan

Research output: Contribution to journalArticle

59 Citations (Scopus)

Abstract

The use of an Ar ion beam and hydrogen chloride gas in the chemically assisted ion beam etching of GaN grown by metalorganic chemical vapor deposition is reported. Etch rates were investigated as a function of ion beam energy and substrate temperature. Hydrogen chloride gas was found to produce higher etch rates at lower ion beam energies (300 eV) and lower rates at higher energies (600 eV) in comparison to Cl2. Highly anisotropic etch profiles are demonstrated that indicate that the process may be suitable for the fabrication of laser facets and mirrors. Changes in surface stoichiometry resulting from the etching process were also investigated using Auger electron spectroscopy.

Original languageEnglish
Pages (from-to)1250
Number of pages1
JournalApplied Physics Letters
Volume67
DOIs
Publication statusPublished - 1995
Externally publishedYes

Fingerprint

ion beams
etching
hydrogen chlorides
gases
Auger spectroscopy
metalorganic chemical vapor deposition
electron spectroscopy
energy
stoichiometry
flat surfaces
chlorides
mirrors
fabrication
profiles
lasers
temperature

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

Cite this

Study of chemically assisted ion beam etching of GaN using HCl gas. / Ping, A. T.; Adesida, I.; Asif Khan, M.

In: Applied Physics Letters, Vol. 67, 1995, p. 1250.

Research output: Contribution to journalArticle

@article{b9ea26ca5a1e4d798ef2072ef799e2f1,
title = "Study of chemically assisted ion beam etching of GaN using HCl gas",
abstract = "The use of an Ar ion beam and hydrogen chloride gas in the chemically assisted ion beam etching of GaN grown by metalorganic chemical vapor deposition is reported. Etch rates were investigated as a function of ion beam energy and substrate temperature. Hydrogen chloride gas was found to produce higher etch rates at lower ion beam energies (300 eV) and lower rates at higher energies (600 eV) in comparison to Cl2. Highly anisotropic etch profiles are demonstrated that indicate that the process may be suitable for the fabrication of laser facets and mirrors. Changes in surface stoichiometry resulting from the etching process were also investigated using Auger electron spectroscopy.",
author = "Ping, {A. T.} and I. Adesida and {Asif Khan}, M.",
year = "1995",
doi = "10.1063/1.114387",
language = "English",
volume = "67",
pages = "1250",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Study of chemically assisted ion beam etching of GaN using HCl gas

AU - Ping, A. T.

AU - Adesida, I.

AU - Asif Khan, M.

PY - 1995

Y1 - 1995

N2 - The use of an Ar ion beam and hydrogen chloride gas in the chemically assisted ion beam etching of GaN grown by metalorganic chemical vapor deposition is reported. Etch rates were investigated as a function of ion beam energy and substrate temperature. Hydrogen chloride gas was found to produce higher etch rates at lower ion beam energies (300 eV) and lower rates at higher energies (600 eV) in comparison to Cl2. Highly anisotropic etch profiles are demonstrated that indicate that the process may be suitable for the fabrication of laser facets and mirrors. Changes in surface stoichiometry resulting from the etching process were also investigated using Auger electron spectroscopy.

AB - The use of an Ar ion beam and hydrogen chloride gas in the chemically assisted ion beam etching of GaN grown by metalorganic chemical vapor deposition is reported. Etch rates were investigated as a function of ion beam energy and substrate temperature. Hydrogen chloride gas was found to produce higher etch rates at lower ion beam energies (300 eV) and lower rates at higher energies (600 eV) in comparison to Cl2. Highly anisotropic etch profiles are demonstrated that indicate that the process may be suitable for the fabrication of laser facets and mirrors. Changes in surface stoichiometry resulting from the etching process were also investigated using Auger electron spectroscopy.

UR - http://www.scopus.com/inward/record.url?scp=0000891848&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0000891848&partnerID=8YFLogxK

U2 - 10.1063/1.114387

DO - 10.1063/1.114387

M3 - Article

VL - 67

SP - 1250

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -