Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing

W. Y. Ho, Charles Surya

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We report detailed characterizations of the effects of hot-electron stressing on low-frequency excess noise in commercial III-V nitride based heterojunction light-emitting diodes. The devices were stressed by applying a dc current ranging from 100 mA to 200 mA. Degradations in the device properties was investigated through detailed studies of the I-V characteristics, electroluminescence and flicker noise over a wide range of temperatures and biases. Our experimental data demonstrated significant distortions in the I-V characteristics. The room temperature electroluminescence of the devices exhibited 25% decrement in the peak emission intensity. In particular, the voltage noise power spectral density increased by nearly three orders of magnitude. The temperature dependencies of the noise power spectra indicate that the noise arises from the thermal activation of carriers to localized states in the heterostructures, Our experiment shows that 1/f noise can be utilized as a sensitive tool for characterizing hot-electron degradation effects in III-V nitride heterojunctions.

Original languageEnglish
Title of host publicationProceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages86-89
Number of pages4
ISBN (Electronic)0780349326, 9780780349322
DOIs
Publication statusPublished - Jan 1 1998
Externally publishedYes
Event5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 - Hong Kong, Hong Kong
Duration: Aug 29 1998Aug 29 1998

Publication series

NameProceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
Volume1998-August

Conference

Conference5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998
CountryHong Kong
CityHong Kong
Period8/29/988/29/98

Fingerprint

Hot electrons
Nitrides
Heterojunctions
Electroluminescence
Degradation
Power spectral density
Power spectrum
Temperature
Light emitting diodes
Chemical activation
Electric potential
Experiments

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Ho, W. Y., & Surya, C. (1998). Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing. In Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998 (pp. 86-89). [740194] (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998; Vol. 1998-August). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/HKEDM.1998.740194

Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing. / Ho, W. Y.; Surya, Charles.

Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998. Institute of Electrical and Electronics Engineers Inc., 1998. p. 86-89 740194 (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998; Vol. 1998-August).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Ho, WY & Surya, C 1998, Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing. in Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998., 740194, Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998, vol. 1998-August, Institute of Electrical and Electronics Engineers Inc., pp. 86-89, 5th IEEE Hong Kong Electron Devices Meeting, HKEDM 1998, Hong Kong, Hong Kong, 8/29/98. https://doi.org/10.1109/HKEDM.1998.740194
Ho WY, Surya C. Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing. In Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998. Institute of Electrical and Electronics Engineers Inc. 1998. p. 86-89. 740194. (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998). https://doi.org/10.1109/HKEDM.1998.740194
Ho, W. Y. ; Surya, Charles. / Study of flicker noise in III-V nitride based heterojunctions due to hot-electron stressing. Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998. Institute of Electrical and Electronics Engineers Inc., 1998. pp. 86-89 (Proceedings - 1998 IEEE Hong Kong Electron Devices Meeting, HKEDM 1998).
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