Study of fluorine bombardment on the electrical properties of AlGaNGaN heterostructures

Anirban Basu, Vipan Kumar, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

14 Citations (Scopus)


The effects of fluorine ion bombardment on the channel transport properties of AlGaNGaN heterostructures have been investigated. Ion bombardment of the heterostructure was carried out within a C F4 plasma in a reactive ion etching system at various self-bias voltages. Hall mobility and sheet electron concentration for the two-dimensional electron gas showed strong dependence on bombardment duration and postbombardment annealing. A systematic study of the behavior of implanted fluorine ions in the annealed heterostructure reveals diffusion followed by accumulation of the ions at the heterointerface. Implications of such behavior on the performance of high electron mobility transistors are briefly discussed.

Original languageEnglish
Pages (from-to)2607-2610
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2007
Externally publishedYes

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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