Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

L. W. Lu, W. K. Fong, C. F. Zhu, B. H. Leung, C. Surya, J. Wang, Weikun Ge

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690°C, and a conventional low-temperature buffer layer deposited at 500°C. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm2V-1s-1 for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at Ec-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 μm in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films.

Original languageEnglish
Pages (from-to)99-104
Number of pages6
JournalJournal of Crystal Growth
Volume234
Issue number1
DOIs
Publication statusPublished - Jan 1 2002
Externally publishedYes

Fingerprint

Buffer layers
Molecular beam epitaxy
molecular beam epitaxy
buffers
Thin films
thin films
Temperature
temperature
Photoluminescence
Spectroscopy
Electron mobility
Epitaxial layers
photoluminescence
control equipment
Optoelectronic devices
electron mobility
spectroscopy
Plasmas

Keywords

  • A1. Characterization
  • A3. Molecular beam epitaxy
  • B2. Semiconducting materials

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry

Cite this

Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy. / Lu, L. W.; Fong, W. K.; Zhu, C. F.; Leung, B. H.; Surya, C.; Wang, J.; Ge, Weikun.

In: Journal of Crystal Growth, Vol. 234, No. 1, 01.01.2002, p. 99-104.

Research output: Contribution to journalArticle

Lu, L. W. ; Fong, W. K. ; Zhu, C. F. ; Leung, B. H. ; Surya, C. ; Wang, J. ; Ge, Weikun. / Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy. In: Journal of Crystal Growth. 2002 ; Vol. 234, No. 1. pp. 99-104.
@article{7574d0fcf1ae48f29a7bd6cf4f6e9723,
title = "Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy",
abstract = "A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690°C, and a conventional low-temperature buffer layer deposited at 500°C. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm2V-1s-1 for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at Ec-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 μm in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films.",
keywords = "A1. Characterization, A3. Molecular beam epitaxy, B2. Semiconducting materials",
author = "Lu, {L. W.} and Fong, {W. K.} and Zhu, {C. F.} and Leung, {B. H.} and C. Surya and J. Wang and Weikun Ge",
year = "2002",
month = "1",
day = "1",
doi = "10.1016/S0022-0248(01)01664-5",
language = "English",
volume = "234",
pages = "99--104",
journal = "Journal of Crystal Growth",
issn = "0022-0248",
publisher = "Elsevier",
number = "1",

}

TY - JOUR

T1 - Study of GaN thin films grown on intermediate-temperature buffer layers by molecular beam epitaxy

AU - Lu, L. W.

AU - Fong, W. K.

AU - Zhu, C. F.

AU - Leung, B. H.

AU - Surya, C.

AU - Wang, J.

AU - Ge, Weikun

PY - 2002/1/1

Y1 - 2002/1/1

N2 - A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690°C, and a conventional low-temperature buffer layer deposited at 500°C. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm2V-1s-1 for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at Ec-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 μm in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films.

AB - A detailed characterisation study of GaN thin films grown by rf-plasma molecular beam epitaxy on intermediate-temperature buffer layers (ITBL) was carried out with Hall, photoluminescence (PL) and deep-level transient Fourier spectroscopy (DLTFS) techniques. The unique feature of our GaN thin films is that the GaN epitaxial layers are grown on top of a double layer that consists of an ITBL, which is grown at 690°C, and a conventional low-temperature buffer layer deposited at 500°C. It is observed that the electron mobility increases steadily with the thickness of the ITBL, which peaks at 377 cm2V-1s-1 for an ITBL thickness of 800 nm. The PL also demonstrated systematic improvements with the thickness of the ITBL. The DLTFS results suggest a three-order-of-magnitude reduction in the deep level at Ec-0.40 eV in the device fabricated with the GaN films grown on an ITBL thickness of 1.25 μm in comparison with the control device without an ITBL. Our analyses indicate that the utilization of an ITBL in addition to the conventional low-temperature buffer layer leads to the relaxation of residual strain within the material, resulting in an improvement in the optoelectronic properties of the films.

KW - A1. Characterization

KW - A3. Molecular beam epitaxy

KW - B2. Semiconducting materials

UR - http://www.scopus.com/inward/record.url?scp=0036127759&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0036127759&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)01664-5

DO - 10.1016/S0022-0248(01)01664-5

M3 - Article

VL - 234

SP - 99

EP - 104

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

SN - 0022-0248

IS - 1

ER -