Study of laser-debonded GaN LEDs

Chung Pui Chan, Jie Gao, Tai Man Yue, Charles Surya, Alan Man Ching Ng, Aleksandra B. Djurišić, Peter Chow Kee Liu, Ming Li

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Detailed investigations of laser-debonded GaN-based light-emitting diodes (LEDs) grown by metal-organic chemical vapor deposition (MOCVD) on sapphire substrates were reported. The debonded surface was roughened by photoelectrochemical (PEC) etching in a mixture of potassium hydroxide (KOH) and peroxydisulfate (K2S2O8) solution. The power for the laser-assisted debonding process has been systematically optimized. The data show that as long as the laser power does not exceed the optimal value, there is no degradation in the current-voltage (I-V) characteristics, the brightness, as well as the low-frequency noise properties of the devices. The roughness of the debonded surface is systematically varied using different etching times. Experimental results demonstrate strong dependencies of the luminous intensity of the device on the roughness of the debonded surface. A 60% improvement in the luminous intensity of the debonded and roughened LED compared to the original on-sapphire device was observed. This increase in the extraction efficiency is attributed to the reduction in the total internal reflection at the roughened GaN/air interface.

Original languageEnglish
Pages (from-to)2266-2271
Number of pages6
JournalIEEE Transactions on Electron Devices
Volume53
Issue number9
DOIs
Publication statusPublished - Sep 1 2006
Externally publishedYes

Fingerprint

Light emitting diodes
light emitting diodes
Aluminum Oxide
Sapphire
luminous intensity
Lasers
Etching
sapphire
roughness
Surface roughness
etching
Organic Chemicals
lasers
potassium hydroxides
Potassium hydroxide
Organic chemicals
Debonding
Current voltage characteristics
metalorganic chemical vapor deposition
Chemical vapor deposition

Keywords

  • Gallium nitride
  • Hexagonal pyramid
  • Laser debonding
  • Light emitting diodes
  • Low-frequency noise
  • Roughening

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

Chan, C. P., Gao, J., Yue, T. M., Surya, C., Ng, A. M. C., Djurišić, A. B., ... Li, M. (2006). Study of laser-debonded GaN LEDs. IEEE Transactions on Electron Devices, 53(9), 2266-2271. https://doi.org/10.1109/TED.2006.881008

Study of laser-debonded GaN LEDs. / Chan, Chung Pui; Gao, Jie; Yue, Tai Man; Surya, Charles; Ng, Alan Man Ching; Djurišić, Aleksandra B.; Liu, Peter Chow Kee; Li, Ming.

In: IEEE Transactions on Electron Devices, Vol. 53, No. 9, 01.09.2006, p. 2266-2271.

Research output: Contribution to journalArticle

Chan, CP, Gao, J, Yue, TM, Surya, C, Ng, AMC, Djurišić, AB, Liu, PCK & Li, M 2006, 'Study of laser-debonded GaN LEDs', IEEE Transactions on Electron Devices, vol. 53, no. 9, pp. 2266-2271. https://doi.org/10.1109/TED.2006.881008
Chan, Chung Pui ; Gao, Jie ; Yue, Tai Man ; Surya, Charles ; Ng, Alan Man Ching ; Djurišić, Aleksandra B. ; Liu, Peter Chow Kee ; Li, Ming. / Study of laser-debonded GaN LEDs. In: IEEE Transactions on Electron Devices. 2006 ; Vol. 53, No. 9. pp. 2266-2271.
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