Abstract
We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.
| Original language | English |
|---|---|
| Title of host publication | Materials Research Society Symposium Proceedings |
| Pages | 257-262 |
| Number of pages | 6 |
| Volume | 892 |
| Publication status | Published - May 15 2006 |
| Externally published | Yes |
| Event | 2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005 |
Conference
| Conference | 2005 Materials Research Society Fall Meeting |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 11/28/05 → 12/2/05 |
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ASJC Scopus subject areas
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials
- Mechanical Engineering
Cite this
Study of laser-debonded GaN light emitting diodes. / Chan, C. P.; Yue, T. M.; Surya, C.; Ng, A. M.C.; Djurišić, A. B.; Liu, C. K.; Li, M.
Materials Research Society Symposium Proceedings. Vol. 892 2006. p. 257-262.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - Study of laser-debonded GaN light emitting diodes
AU - Chan, C. P.
AU - Yue, T. M.
AU - Surya, C.
AU - Ng, A. M.C.
AU - Djurišić, A. B.
AU - Liu, C. K.
AU - Li, M.
PY - 2006/5/15
Y1 - 2006/5/15
N2 - We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.
AB - We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.
UR - http://www.scopus.com/inward/record.url?scp=33646389834&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=33646389834&partnerID=8YFLogxK
M3 - Conference contribution
AN - SCOPUS:33646389834
SN - 1558998462
SN - 9781558998469
VL - 892
SP - 257
EP - 262
BT - Materials Research Society Symposium Proceedings
ER -