Study of laser-debonded GaN light emitting diodes

C. P. Chan; T. M. Yue; C. Surya; A. M.C. Ng; A. B. Djurišić; C. K. Liu; M. Li

Study of laser-debonded GaN light emitting diodes

C. P. Chan, T. M. Yue, C. Surya, A. M.C. Ng, A. B. Djurišić, C. K. Liu, M. Li

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.

Original language	English
Title of host publication	Materials Research Society Symposium Proceedings
Pages	257-262
Number of pages	6
Volume	892
Publication status	Published - May 15 2006
Externally published	Yes
Event	2005 Materials Research Society Fall Meeting - Boston, MA, United States Duration: Nov 28 2005 → Dec 2 2005

Publication series

Name	Materials Research Society Symposium Proceedings
Volume	892
ISSN (Print)	0272-9172

Conference

Conference	2005 Materials Research Society Fall Meeting
Country	United States
City	Boston, MA
Period	11/28/05 → 12/2/05

ASJC Scopus subject areas

Materials Science(all)
Condensed Matter Physics
Mechanics of Materials
Mechanical Engineering

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Cite this

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title = "Study of laser-debonded GaN light emitting diodes",

abstract = "We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.",

author = "Chan, {C. P.} and Yue, {T. M.} and C. Surya and Ng, {A. M.C.} and Djuri{\v s}i{\'c}, {A. B.} and Liu, {C. K.} and M. Li",

year = "2006",

month = may,

day = "15",

language = "English",

isbn = "1558998462",

volume = "892",

series = "Materials Research Society Symposium Proceedings",

pages = "257--262",

booktitle = "Materials Research Society Symposium Proceedings",

note = "2005 Materials Research Society Fall Meeting ; Conference date: 28-11-2005 Through 02-12-2005",

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TY - GEN

T1 - Study of laser-debonded GaN light emitting diodes

AU - Chan, C. P.

AU - Yue, T. M.

AU - Surya, C.

AU - Ng, A. M.C.

AU - Djurišić, A. B.

AU - Liu, C. K.

AU - Li, M.

PY - 2006/5/15

Y1 - 2006/5/15

N2 - We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.

AB - We report experimental investigation of laser-assisted debonding of GaN-based light emitting diodes (LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The sapphire substrate was debonded from the GaN material using an excimer laser. The unintentionally doped GaN surface was photo-electrochemically (PEC) etched to form hexagonal pyramid hillocks on the surface, using HeCd laser as the light source. The luminous intensities of the debonded and roughened LEDs at different etching time, as a function of different surface roughness, have been reported. In this experiment, the greatest improvement in the luminous intensities has been achieved at 40mins etching and increased by 60% when compared to the LEDs on sapphire. This increase is attributed to the enhancement in photon extraction efficiency.

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M3 - Conference contribution

AN - SCOPUS:33646389834

SN - 1558998462

SN - 9781558998469

VL - 892

T3 - Materials Research Society Symposium Proceedings

SP - 257

EP - 262

BT - Materials Research Society Symposium Proceedings

T2 - 2005 Materials Research Society Fall Meeting

Y2 - 28 November 2005 through 2 December 2005

ER -