Study of light-induced annealing effects in a-Si: H thin films

W. Y. Ho, C. Surya

Research output: Contribution to journalArticlepeer-review

1 Citation (Scopus)

Abstract

Light-induced metastability was examined in hydrogenated amorphous silicon thin films using a 500 W xenon lamp and a 10 mW HeCd laser. Positron beam annihilation spectroscopy (PAS) and fourier transform infrared spectroscopy (FTIR) were examined to investigate the effects of light on the structural properties of the films. The experimental results exhibited significant decrease in the S-parameter of the PAS, indicating marked reduction in the defect density of the films. The FTIR spectroscopy showed significant reduction in the transmission coefficient of IR radiation at frequencies corresponding to Si-H and Si-H3 phonon modes, indicating that the observed annealing effects were due to light-induced formation of Si-H and Si-H3 bonds. A second thermal annealing process conducted after the light exposure experiment resulted in a further substantial decrease in defect density for the sample exposed to HeCd laser. The experimental results are explained by a competing, light induced, dangling bond creation/annealing process, in which the incoming photons caused the annealing of dangling bonds, particularly those at around the voids. However, in the bulk region, the photons caused both the breaking of weak Si-Si bonds as well as the annealing of dangling bonds.

Original languageEnglish
Pages (from-to)913-917
Number of pages5
JournalMicroelectronics Reliability
Volume41
Issue number6
DOIs
Publication statusPublished - Jan 1 2001
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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