Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

Bong Hung Leung; Wai Keung Fong; Chang Fei Zhu; Charles Surya

doi:10.1109/16.954483

Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

Bong Hung Leung, Wai Keung Fong, Chang Fei Zhu, Charles Surya

Research output: Contribution to journal › Article › peer-review

23 Citations (Scopus)

Abstract

Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 ^-2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.

Original language	English
Pages (from-to)	2400-2404
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	48
Issue number	10
DOIs	https://doi.org/10.1109/16.954483
Publication status	Published - Oct 1 2001
Externally published	Yes

Keywords

Gallium nitride
Intermediate-temperature buffer layer
Low-frequency noise

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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title = "Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers",

abstract = "Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.",

keywords = "Gallium nitride, Intermediate-temperature buffer layer, Low-frequency noise",

author = "Leung, {Bong Hung} and Fong, {Wai Keung} and Zhu, {Chang Fei} and Charles Surya",

note = "Funding Information: Manuscript received March 12, 2001; revised May 22, 2001. This work was supported in part by a Grant from the Research Grants Council of the Hong Kong Special Administrative Region, China Project PolyU5098/98E and University Research Grants from The Hong Kong Polytechnic University. The review of this paper was arranged by Editor J. Hollenhorst.",

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AU - Leung, Bong Hung

AU - Fong, Wai Keung

AU - Zhu, Chang Fei

AU - Surya, Charles

N1 - Funding Information: Manuscript received March 12, 2001; revised May 22, 2001. This work was supported in part by a Grant from the Research Grants Council of the Hong Kong Special Administrative Region, China Project PolyU5098/98E and University Research Grants from The Hong Kong Polytechnic University. The review of this paper was arranged by Editor J. Hollenhorst.

PY - 2001/10/1

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N2 - Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.

AB - Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.

KW - Gallium nitride

KW - Intermediate-temperature buffer layer

KW - Low-frequency noise

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JF - IEEE Transactions on Electron Devices

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Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

Abstract

Keywords

ASJC Scopus subject areas

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