Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers

Bong Hung Leung, Wai Keung Fong, Chang Fei Zhu, Charles Surya

Research output: Contribution to journalArticle

23 Citations (Scopus)

Abstract

Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.

Original languageEnglish
Pages (from-to)2400-2404
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume48
Issue number10
DOIs
Publication statusPublished - Oct 1 2001
Externally publishedYes

Fingerprint

Buffer layers
Molecular beam epitaxy
Thin films
Temperature
Epitaxial films
Epitaxial layers
Crystalline materials
Plasmas
Defects

Keywords

  • Gallium nitride
  • Intermediate-temperature buffer layer
  • Low-frequency noise

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers. / Leung, Bong Hung; Fong, Wai Keung; Zhu, Chang Fei; Surya, Charles.

In: IEEE Transactions on Electron Devices, Vol. 48, No. 10, 01.10.2001, p. 2400-2404.

Research output: Contribution to journalArticle

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