Abstract
Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.
| Original language | English |
|---|---|
| Pages (from-to) | 2400-2404 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 48 |
| Issue number | 10 |
| DOIs | |
| Publication status | Published - Oct 1 2001 |
| Externally published | Yes |
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Keywords
- Gallium nitride
- Intermediate-temperature buffer layer
- Low-frequency noise
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
Cite this
Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers. / Leung, Bong Hung; Fong, Wai Keung; Zhu, Chang Fei; Surya, Charles.
In: IEEE Transactions on Electron Devices, Vol. 48, No. 10, 01.10.2001, p. 2400-2404.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Study of low-frequency excess noise in GaN thin films deposited by RF-MBE on intermediate-temperature buffer layers
AU - Leung, Bong Hung
AU - Fong, Wai Keung
AU - Zhu, Chang Fei
AU - Surya, Charles
PY - 2001/10/1
Y1 - 2001/10/1
N2 - Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.
AB - Low-frequency excess noise was measured in a series of GaN epitaxial films deposited by RF-plasma assisted molecular beam epitaxy (MBE). The GaN epitaxial layers were grown on double buffer layers, each consisting of an intermediate-temperature buffer layer (ITBL) deposited at 690°C and a conventional low-temperature buffer layer grown at 500°C. The Hooge parameters for the as-grown films were found to depend on the thickness of ITBL with a minimum value of 7.34 × 10 -2 for an optimal ITBL thickness of 800 nm. The observed improvements in the noise properties are attributed to the relaxation of residual strain within the material, leading to a corresponding reduction in crystalline defects.
KW - Gallium nitride
KW - Intermediate-temperature buffer layer
KW - Low-frequency noise
UR - http://www.scopus.com/inward/record.url?scp=0035471244&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035471244&partnerID=8YFLogxK
U2 - 10.1109/16.954483
DO - 10.1109/16.954483
M3 - Article
VL - 48
SP - 2400
EP - 2404
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 10
ER -