Study of low-frequency excess noise transport in Ga-face and N-face GaN thin films grown on intermediate-temperature buffer layer by RF-MBE

W. K. Fong, B. H. Leung, J. Q. Xie, C. Surya

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

We report detailed investigations of low-frequency excess noise in both Ga-faced and N-faced GaN thin films grown by RF-plasma molecular beam epitaxy. The GaN epilayers were grown on double buffer layers, and consisted of a thick intermediate-temperature buffer layer (ITBL) deposited at 690 °C and a conventional thin buffer layer. Deposition of the thin buffer layer is used to control the polarity of the GaN epilayer. Low-frequency excess noise was studied in detail to examine the effects on the ITBL on the noise. The low-frequency noise is attributed to the correlated fluctuations in number and mobility of carriers, arising from the capture and emission by localized states. Our experimental results show that the polarity of the GaN epilayer and the utilization of ITBL have strong influence on the defect density of the GaN material.

Original languageEnglish
Pages (from-to)466-471
Number of pages6
JournalPhysica Status Solidi (A) Applied Research
Volume192
Issue number2
DOIs
Publication statusPublished - Aug 1 2002
Externally publishedYes
Event4th International Symposium on Blue Lasers and Light Emitting Diodes (ISBLLED-2002) - Cordoba, Spain
Duration: Mar 11 2002Mar 15 2002

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electronic, Optical and Magnetic Materials

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