Study of low-frequency noise in GaN-on-Si films obtained by laser-assisted debonding

C. P. Chan, P. K. Lai, B. H. Leung, T. M. Yue, C. Surya

Research output: Contribution to journalConference article

Abstract

Detailed optical and electronic characterizations were conducted on interdigitated devices fabricated on both GaN-on-sapphire and GaN-on-Si films. The GaN-on-Si films, up to dimension of 1 cm by 1 cm, were obtained by layer transfer of laser-debonded hydride vapor phase epitaxy (HVPE)-grown GaN films deposited on sapphire substrates. The study of breakdown voltages and the leakage currents show comparable results for both types of devices indicating the integrity of the devices did not suffer due to the liftoff process. A reduction in the yellow emission is observed in the debonded GaN layer suggesting an improvement in the material quality. To investigate the physical origin of this, low-frequency noise was examined on both Schottky and ohmic junctions fabricated on both types of materials. The experimental data on low-frequency noise indicated significant reduction in the defect density in the debonded film. This is believed to arise from a thermal annealing effect during the laser illumination process.

Original languageEnglish
Pages (from-to)328-341
Number of pages14
JournalProceedings of SPIE - The International Society for Optical Engineering
Volume5113
DOIs
Publication statusPublished - Sep 19 2003
Externally publishedYes
EventNoise in Devices and Circuits - Santa Fe, NM, United States
Duration: Jun 2 2003Jun 4 2003

Fingerprint

Low-frequency Noise
Debonding
Laser
low frequencies
Lasers
Aluminum Oxide
Sapphire
lasers
sapphire
Leakage Current
Vapor phase epitaxy
Epitaxy
Defect density
Electric breakdown
Annealing
electrical faults
Hydrides
vapor phase epitaxy
Leakage currents
integrity

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Study of low-frequency noise in GaN-on-Si films obtained by laser-assisted debonding. / Chan, C. P.; Lai, P. K.; Leung, B. H.; Yue, T. M.; Surya, C.

In: Proceedings of SPIE - The International Society for Optical Engineering, Vol. 5113, 19.09.2003, p. 328-341.

Research output: Contribution to journalConference article

@article{cdef3dd860c8473a9db9512c08ea7bf4,
title = "Study of low-frequency noise in GaN-on-Si films obtained by laser-assisted debonding",
abstract = "Detailed optical and electronic characterizations were conducted on interdigitated devices fabricated on both GaN-on-sapphire and GaN-on-Si films. The GaN-on-Si films, up to dimension of 1 cm by 1 cm, were obtained by layer transfer of laser-debonded hydride vapor phase epitaxy (HVPE)-grown GaN films deposited on sapphire substrates. The study of breakdown voltages and the leakage currents show comparable results for both types of devices indicating the integrity of the devices did not suffer due to the liftoff process. A reduction in the yellow emission is observed in the debonded GaN layer suggesting an improvement in the material quality. To investigate the physical origin of this, low-frequency noise was examined on both Schottky and ohmic junctions fabricated on both types of materials. The experimental data on low-frequency noise indicated significant reduction in the defect density in the debonded film. This is believed to arise from a thermal annealing effect during the laser illumination process.",
author = "Chan, {C. P.} and Lai, {P. K.} and Leung, {B. H.} and Yue, {T. M.} and C. Surya",
year = "2003",
month = "9",
day = "19",
doi = "10.1117/12.497674",
language = "English",
volume = "5113",
pages = "328--341",
journal = "Proceedings of SPIE - The International Society for Optical Engineering",
issn = "0277-786X",
publisher = "SPIE",

}

TY - JOUR

T1 - Study of low-frequency noise in GaN-on-Si films obtained by laser-assisted debonding

AU - Chan, C. P.

AU - Lai, P. K.

AU - Leung, B. H.

AU - Yue, T. M.

AU - Surya, C.

PY - 2003/9/19

Y1 - 2003/9/19

N2 - Detailed optical and electronic characterizations were conducted on interdigitated devices fabricated on both GaN-on-sapphire and GaN-on-Si films. The GaN-on-Si films, up to dimension of 1 cm by 1 cm, were obtained by layer transfer of laser-debonded hydride vapor phase epitaxy (HVPE)-grown GaN films deposited on sapphire substrates. The study of breakdown voltages and the leakage currents show comparable results for both types of devices indicating the integrity of the devices did not suffer due to the liftoff process. A reduction in the yellow emission is observed in the debonded GaN layer suggesting an improvement in the material quality. To investigate the physical origin of this, low-frequency noise was examined on both Schottky and ohmic junctions fabricated on both types of materials. The experimental data on low-frequency noise indicated significant reduction in the defect density in the debonded film. This is believed to arise from a thermal annealing effect during the laser illumination process.

AB - Detailed optical and electronic characterizations were conducted on interdigitated devices fabricated on both GaN-on-sapphire and GaN-on-Si films. The GaN-on-Si films, up to dimension of 1 cm by 1 cm, were obtained by layer transfer of laser-debonded hydride vapor phase epitaxy (HVPE)-grown GaN films deposited on sapphire substrates. The study of breakdown voltages and the leakage currents show comparable results for both types of devices indicating the integrity of the devices did not suffer due to the liftoff process. A reduction in the yellow emission is observed in the debonded GaN layer suggesting an improvement in the material quality. To investigate the physical origin of this, low-frequency noise was examined on both Schottky and ohmic junctions fabricated on both types of materials. The experimental data on low-frequency noise indicated significant reduction in the defect density in the debonded film. This is believed to arise from a thermal annealing effect during the laser illumination process.

UR - http://www.scopus.com/inward/record.url?scp=0041322878&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0041322878&partnerID=8YFLogxK

U2 - 10.1117/12.497674

DO - 10.1117/12.497674

M3 - Conference article

AN - SCOPUS:0041322878

VL - 5113

SP - 328

EP - 341

JO - Proceedings of SPIE - The International Society for Optical Engineering

JF - Proceedings of SPIE - The International Society for Optical Engineering

SN - 0277-786X

ER -