Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques

J. Kováč, S. K. Jha, E. V. Jelenković, O. Kutsay, M. Pejović, C. Surya, J. A. Zapien, I. Bello, R. Srnánek, J. Kováč, S. Flickyngerová

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) were fabricated and their electrical and thermal properties were examined. The influence of irradiation to direct current (DC) and low-frequency noise properties of these devices have already been investigated and published. However, the thermal processes in the active layers of these devices can also induce significant changes in the performance of devices. Since thermal processes are directly associated with temperature distribution, temperature mapping in the devices has been suggested using a mu;-Raman technique. Considering that the phonon frequencies are sensitive to the sample temperature, the shift of first-order Raman scattering can conveniently be used to directly measure the device temperature with a high spatial resolution. In this context, we report time resolved and sample mapping Raman spectra inside the HEMTs channel as measures of temperatures.

Original languageEnglish
Title of host publicationConference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Pages123-126
Number of pages4
DOIs
Publication statusPublished - Dec 1 2010
Externally publishedYes
Event18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 - Smolenice, Slovakia
Duration: Oct 25 2010Oct 27 2010

Publication series

NameConference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010

Conference

Conference18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
CountrySlovakia
CitySmolenice
Period10/25/1010/27/10

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

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