Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques

J. Kováč, S. K. Jha, E. V. Jelenković, O. Kutsay, M. Pejović, C. Surya, J. A. Zapien, I. Bello, R. Srnánek, J. Kováč, S. Flickyngerová

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) were fabricated and their electrical and thermal properties were examined. The influence of irradiation to direct current (DC) and low-frequency noise properties of these devices have already been investigated and published. However, the thermal processes in the active layers of these devices can also induce significant changes in the performance of devices. Since thermal processes are directly associated with temperature distribution, temperature mapping in the devices has been suggested using a mu;-Raman technique. Considering that the phonon frequencies are sensitive to the sample temperature, the shift of first-order Raman scattering can conveniently be used to directly measure the device temperature with a high spatial resolution. In this context, we report time resolved and sample mapping Raman spectra inside the HEMTs channel as measures of temperatures.

Original languageEnglish
Title of host publicationConference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
Pages123-126
Number of pages4
DOIs
Publication statusPublished - Dec 1 2010
Externally publishedYes
Event18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 - Smolenice, Slovakia
Duration: Oct 25 2010Oct 27 2010

Conference

Conference18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010
CountrySlovakia
CitySmolenice
Period10/25/1010/27/10

Fingerprint

High electron mobility transistors
Temperature distribution
Raman scattering
Temperature
Electric properties
Thermodynamic properties
Irradiation
Hot Temperature

ASJC Scopus subject areas

  • Control and Systems Engineering
  • Electrical and Electronic Engineering

Cite this

Kováč, J., Jha, S. K., Jelenković, E. V., Kutsay, O., Pejović, M., Surya, C., ... Flickyngerová, S. (2010). Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques. In Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010 (pp. 123-126). [5666315] https://doi.org/10.1109/ASDAM.2010.5666315

Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques. / Kováč, J.; Jha, S. K.; Jelenković, E. V.; Kutsay, O.; Pejović, M.; Surya, C.; Zapien, J. A.; Bello, I.; Srnánek, R.; Kováč, J.; Flickyngerová, S.

Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. 2010. p. 123-126 5666315.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Kováč, J, Jha, SK, Jelenković, EV, Kutsay, O, Pejović, M, Surya, C, Zapien, JA, Bello, I, Srnánek, R, Kováč, J & Flickyngerová, S 2010, Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques. in Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010., 5666315, pp. 123-126, 18th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010, Smolenice, Slovakia, 10/25/10. https://doi.org/10.1109/ASDAM.2010.5666315
Kováč J, Jha SK, Jelenković EV, Kutsay O, Pejović M, Surya C et al. Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques. In Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. 2010. p. 123-126. 5666315 https://doi.org/10.1109/ASDAM.2010.5666315
Kováč, J. ; Jha, S. K. ; Jelenković, E. V. ; Kutsay, O. ; Pejović, M. ; Surya, C. ; Zapien, J. A. ; Bello, I. ; Srnánek, R. ; Kováč, J. ; Flickyngerová, S. / Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques. Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010. 2010. pp. 123-126
@inproceedings{f5606546d4f64b1ebbd11ebf8e9d086e,
title = "Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques",
abstract = "AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) were fabricated and their electrical and thermal properties were examined. The influence of irradiation to direct current (DC) and low-frequency noise properties of these devices have already been investigated and published. However, the thermal processes in the active layers of these devices can also induce significant changes in the performance of devices. Since thermal processes are directly associated with temperature distribution, temperature mapping in the devices has been suggested using a mu;-Raman technique. Considering that the phonon frequencies are sensitive to the sample temperature, the shift of first-order Raman scattering can conveniently be used to directly measure the device temperature with a high spatial resolution. In this context, we report time resolved and sample mapping Raman spectra inside the HEMTs channel as measures of temperatures.",
author = "J. Kov{\'a}č and Jha, {S. K.} and Jelenković, {E. V.} and O. Kutsay and M. Pejović and C. Surya and Zapien, {J. A.} and I. Bello and R. Srn{\'a}nek and J. Kov{\'a}č and S. Flickyngerov{\'a}",
year = "2010",
month = "12",
day = "1",
doi = "10.1109/ASDAM.2010.5666315",
language = "English",
isbn = "9781424485758",
pages = "123--126",
booktitle = "Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010",

}

TY - GEN

T1 - Study of temperature distribution in the channels of AlGaN/GaN HEMT devices by μ- Raman characterization techniques

AU - Kováč, J.

AU - Jha, S. K.

AU - Jelenković, E. V.

AU - Kutsay, O.

AU - Pejović, M.

AU - Surya, C.

AU - Zapien, J. A.

AU - Bello, I.

AU - Srnánek, R.

AU - Kováč, J.

AU - Flickyngerová, S.

PY - 2010/12/1

Y1 - 2010/12/1

N2 - AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) were fabricated and their electrical and thermal properties were examined. The influence of irradiation to direct current (DC) and low-frequency noise properties of these devices have already been investigated and published. However, the thermal processes in the active layers of these devices can also induce significant changes in the performance of devices. Since thermal processes are directly associated with temperature distribution, temperature mapping in the devices has been suggested using a mu;-Raman technique. Considering that the phonon frequencies are sensitive to the sample temperature, the shift of first-order Raman scattering can conveniently be used to directly measure the device temperature with a high spatial resolution. In this context, we report time resolved and sample mapping Raman spectra inside the HEMTs channel as measures of temperatures.

AB - AlGaN/GaN and InAlN/GaN high electron mobility transistors (HEMTs) were fabricated and their electrical and thermal properties were examined. The influence of irradiation to direct current (DC) and low-frequency noise properties of these devices have already been investigated and published. However, the thermal processes in the active layers of these devices can also induce significant changes in the performance of devices. Since thermal processes are directly associated with temperature distribution, temperature mapping in the devices has been suggested using a mu;-Raman technique. Considering that the phonon frequencies are sensitive to the sample temperature, the shift of first-order Raman scattering can conveniently be used to directly measure the device temperature with a high spatial resolution. In this context, we report time resolved and sample mapping Raman spectra inside the HEMTs channel as measures of temperatures.

UR - http://www.scopus.com/inward/record.url?scp=78651450304&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78651450304&partnerID=8YFLogxK

U2 - 10.1109/ASDAM.2010.5666315

DO - 10.1109/ASDAM.2010.5666315

M3 - Conference contribution

AN - SCOPUS:78651450304

SN - 9781424485758

SP - 123

EP - 126

BT - Conference Proceedings - The 8th International Conference on Advanced Semiconductor Devices and Microsystems, ASDAM 2010

ER -