Sub-Poissonian shot noise of a high internal gain injection photon detector

Omer Gokalp Memis, Alex Katsnelson, Soon Cheol Kong, Hooman Mohseni, Minjun Yan, Shuang Zhang, Tim Hossain, Niu Jin, Ilesanmi Adesida

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31 Citations (Scopus)

Abstract

The noise performance of an infrared injection photon detector with very high internal gain was investigated at a wavelength of 1.55 μm. The devices showed sub-Poissonian shot noise with Fano factors around 0.55 at 0.7 V at room temperature. Optical to electrical conversion factors of 3000 electrons per absorbed photon were recorded at 0.7 V. The change in noise-equivalent power with respect to bias voltage was evaluated. The optical to electrical conversion factor and Fano factor were measured under increasing illumination and compared to theoretical expectations.

Original languageEnglish
Pages (from-to)12701-12706
Number of pages6
JournalOptics Express
Volume16
Issue number17
DOIs
Publication statusPublished - Aug 18 2008

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Memis, O. G., Katsnelson, A., Kong, S. C., Mohseni, H., Yan, M., Zhang, S., Hossain, T., Jin, N., & Adesida, I. (2008). Sub-Poissonian shot noise of a high internal gain injection photon detector. Optics Express, 16(17), 12701-12706. https://doi.org/10.1364/OE.16.012701