Abstract
A masked ion beam/optical hybrid lithography process for fabricating GaAs MESFETs is described. Techniques for eliminating the damage caused by the ions penetrating through the resist into the GaAs substrate are discussed. Submicrometer gate GaAs FET fabricated using the hybrid lithography is shown and the electrical characteristics of the depletion-mode device presented.
Original language | English |
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Pages (from-to) | 1080-1083 |
Number of pages | 4 |
Journal | Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures |
Volume | 1 |
Issue number | 4 |
DOIs | |
Publication status | Published - Jan 1 1983 |
Event | Proc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA Duration: May 31 1983 → Jun 3 1983 |
ASJC Scopus subject areas
- Condensed Matter Physics
- Electrical and Electronic Engineering