SUBMICROMETER-GATE GaAs FET FABRICATION USING MASKED ION BEAM/OPTICAL HYBRID LITHOGRAPHY.

I. Adesida, M. Zhang, R. Sadler, R. Tiberio, E. D. Wolf

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

A masked ion beam/optical hybrid lithography process for fabricating GaAs MESFETs is described. Techniques for eliminating the damage caused by the ions penetrating through the resist into the GaAs substrate are discussed. Submicrometer gate GaAs FET fabricated using the hybrid lithography is shown and the electrical characteristics of the depletion-mode device presented.

Original languageEnglish
Pages (from-to)1080-1083
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - Oct 1983
Externally publishedYes

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Field effect transistors
Lithography
Ion beams
Fabrication
Ions
Substrates

ASJC Scopus subject areas

  • Engineering(all)

Cite this

SUBMICROMETER-GATE GaAs FET FABRICATION USING MASKED ION BEAM/OPTICAL HYBRID LITHOGRAPHY. / Adesida, I.; Zhang, M.; Sadler, R.; Tiberio, R.; Wolf, E. D.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 1, No. 4, 10.1983, p. 1080-1083.

Research output: Contribution to journalArticle

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