SUBMICROMETER-GATE GaAs FET FABRICATION USING MASKED ION BEAM/OPTICAL HYBRID LITHOGRAPHY.

I. Adesida, M. Zhang, R. Sadler, R. Tiberio, E. D. Wolf

Research output: Contribution to journalConference article

4 Citations (Scopus)

Abstract

A masked ion beam/optical hybrid lithography process for fabricating GaAs MESFETs is described. Techniques for eliminating the damage caused by the ions penetrating through the resist into the GaAs substrate are discussed. Submicrometer gate GaAs FET fabricated using the hybrid lithography is shown and the electrical characteristics of the depletion-mode device presented.

Original languageEnglish
Pages (from-to)1080-1083
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume1
Issue number4
DOIs
Publication statusPublished - Jan 1 1983
EventProc of the Int Symp on Electron, Ion, and Photon Beams - Los Angeles, CA, USA
Duration: May 31 1983Jun 3 1983

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ASJC Scopus subject areas

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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