Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications

I. Adesida, M. Arafa, K. Ismail, J. O. Chu, B. S. Meyerson

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Excellent improvement in the hole transport properties for SiGe heterostructures promises symmetric, higher speed, and lower power consumption circuits compared to conventional Si CMOS devices. Modulation-doped field effect transistors (MODFETs) grown on a relaxed Si0.7Ge0.3 buffer have been fabricated using a self-aligned gate process. The p-type devices had gate lengths ranging from 1.0 μm down to 0.1 μm. A record unity current gain cutoff frequency fT of 70 GHz was obtained for 0.1 μm gate-length devices.

Original languageEnglish
Pages (from-to)257-260
Number of pages4
JournalMicroelectronic Engineering
Volume35
Issue number1-4
Publication statusPublished - Feb 1997
Externally publishedYes

Fingerprint

Cutoff frequency
High electron mobility transistors
Transport properties
Heterojunctions
Buffers
Electric power utilization
field effect transistors
high speed
modulation
Networks (circuits)
unity
CMOS
cut-off
buffers
transport properties

ASJC Scopus subject areas

  • Hardware and Architecture
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Surfaces, Coatings and Films
  • Atomic and Molecular Physics, and Optics

Cite this

Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications. / Adesida, I.; Arafa, M.; Ismail, K.; Chu, J. O.; Meyerson, B. S.

In: Microelectronic Engineering, Vol. 35, No. 1-4, 02.1997, p. 257-260.

Research output: Contribution to journalArticle

Adesida, I, Arafa, M, Ismail, K, Chu, JO & Meyerson, BS 1997, 'Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications', Microelectronic Engineering, vol. 35, no. 1-4, pp. 257-260.
Adesida, I. ; Arafa, M. ; Ismail, K. ; Chu, J. O. ; Meyerson, B. S. / Submicrometer p-Type SiGe modulation-doped field-effect transistors for high speed applications. In: Microelectronic Engineering. 1997 ; Vol. 35, No. 1-4. pp. 257-260.
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