TY - JOUR
T1 - Surface acoustic wave amplification by direct current-voltage supplied to graphene film
AU - Insepov, Z.
AU - Emelin, E.
AU - Kononenko, O.
AU - Roshchupkin, D. V.
AU - Tnyshtykbayev, K. B.
AU - Baigarin, K. A.
N1 - Publisher Copyright:
© 2015 AIP Publishing LLC.
Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 2015/1/12
Y1 - 2015/1/12
N2 - Using a high-resolution X-Ray diffraction measurement method, the surface acoustic wave (SAW) propagation in a graphene film on the surface of a Ca3TaGa3Si2O14 (CTGS) piezoelectric crystal was investigated, where an external current was driven across the graphene film. Here, we show that the application of the DC field leads to a significant enhancement of the SAW magnitude and, as a result, to amplification of the diffraction satellites. Amplification of 33.2 dB/cm for the satellite +1, and of 13.8 dB/cm for the satellite +2, at 471 MHz has been observed where the external DC voltage of +10 V was applied. Amplification of SAW occurs above a DC field much smaller than that of a system using bulk semiconductor. Theoretical estimates are in reasonable agreement with our measurements and analysis of experimental data for other materials.
AB - Using a high-resolution X-Ray diffraction measurement method, the surface acoustic wave (SAW) propagation in a graphene film on the surface of a Ca3TaGa3Si2O14 (CTGS) piezoelectric crystal was investigated, where an external current was driven across the graphene film. Here, we show that the application of the DC field leads to a significant enhancement of the SAW magnitude and, as a result, to amplification of the diffraction satellites. Amplification of 33.2 dB/cm for the satellite +1, and of 13.8 dB/cm for the satellite +2, at 471 MHz has been observed where the external DC voltage of +10 V was applied. Amplification of SAW occurs above a DC field much smaller than that of a system using bulk semiconductor. Theoretical estimates are in reasonable agreement with our measurements and analysis of experimental data for other materials.
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U2 - 10.1063/1.4906033
DO - 10.1063/1.4906033
M3 - Article
AN - SCOPUS:84923899789
VL - 106
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 2
M1 - 023505
ER -