Surface-barrier heterojunctions TiO₂/CdZnTe

This paper reports the results of an investigation into electrical and photoelectrical properties of anisotype heterojunctions n-TiO2/p-Cd1-xZnxTe prepared by the dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-Cd1-xZnxTe single crystal substrates. The heterojunctions were established to be abrupt surface-barrier semiconductor structures with the uniform distribution of uncompensated acceptors within the space charge region, which is located in the narrow-band semiconductor. The dominating mechanisms of charge transport were analyzed in the scope of tunnel-recombination processes via interface states and complex defects (V ^-2CdD⁺)^-1 at forward and reverse biases. The main photoelectric parameters and the spectral distribution of actual quantum efficiency were measured at room temperature.