Surface-barrier heterojunctions TiO2/CdZnTe

V. V. Brus; M. I. Ilashchuk; Z. D. Kovalyuk; P. D. Maryanchuk; O. A. Parfenyuk

doi:10.1088/0268-1242/28/1/015014

Surface-barrier heterojunctions TiO₂/CdZnTe

V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, P. D. Maryanchuk, O. A. Parfenyuk

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

This paper reports the results of an investigation into electrical and photoelectrical properties of anisotype heterojunctions n-TiO2/p-Cd1-xZnxTe prepared by the dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-Cd1-xZnxTe single crystal substrates. The heterojunctions were established to be abrupt surface-barrier semiconductor structures with the uniform distribution of uncompensated acceptors within the space charge region, which is located in the narrow-band semiconductor. The dominating mechanisms of charge transport were analyzed in the scope of tunnel-recombination processes via interface states and complex defects (V ^-2CdD⁺)^-1 at forward and reverse biases. The main photoelectric parameters and the spectral distribution of actual quantum efficiency were measured at room temperature.

Original language	English
Article number	015014
Journal	Semiconductor Science and Technology
Volume	28
Issue number	1
DOIs	https://doi.org/10.1088/0268-1242/28/1/015014
Publication status	Published - Jan 2013
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Electrical and Electronic Engineering
Materials Chemistry

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title = "Surface-barrier heterojunctions TiO2/CdZnTe",

abstract = "This paper reports the results of an investigation into electrical and photoelectrical properties of anisotype heterojunctions n-TiO2/p-Cd1-xZnxTe prepared by the dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-Cd1-xZnxTe single crystal substrates. The heterojunctions were established to be abrupt surface-barrier semiconductor structures with the uniform distribution of uncompensated acceptors within the space charge region, which is located in the narrow-band semiconductor. The dominating mechanisms of charge transport were analyzed in the scope of tunnel-recombination processes via interface states and complex defects (V -2CdD+)-1 at forward and reverse biases. The main photoelectric parameters and the spectral distribution of actual quantum efficiency were measured at room temperature.",

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AU - Brus, V. V.

AU - Ilashchuk, M. I.

AU - Kovalyuk, Z. D.

AU - Maryanchuk, P. D.

AU - Parfenyuk, O. A.

PY - 2013/1

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AB - This paper reports the results of an investigation into electrical and photoelectrical properties of anisotype heterojunctions n-TiO2/p-Cd1-xZnxTe prepared by the dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-Cd1-xZnxTe single crystal substrates. The heterojunctions were established to be abrupt surface-barrier semiconductor structures with the uniform distribution of uncompensated acceptors within the space charge region, which is located in the narrow-band semiconductor. The dominating mechanisms of charge transport were analyzed in the scope of tunnel-recombination processes via interface states and complex defects (V -2CdD+)-1 at forward and reverse biases. The main photoelectric parameters and the spectral distribution of actual quantum efficiency were measured at room temperature.

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