Surface-barrier heterojunctions TiO2/CdZnTe

V. V. Brus, M. I. Ilashchuk, Z. D. Kovalyuk, P. D. Maryanchuk, O. A. Parfenyuk

Research output: Contribution to journalArticlepeer-review

15 Citations (Scopus)

Abstract

This paper reports the results of an investigation into electrical and photoelectrical properties of anisotype heterojunctions n-TiO2/p-Cd1-xZnxTe prepared by the dc reactive magnetron deposition of TiO2 thin films with n-type conductivity onto freshly cleaved p-Cd1-xZnxTe single crystal substrates. The heterojunctions were established to be abrupt surface-barrier semiconductor structures with the uniform distribution of uncompensated acceptors within the space charge region, which is located in the narrow-band semiconductor. The dominating mechanisms of charge transport were analyzed in the scope of tunnel-recombination processes via interface states and complex defects (V -2CdD+)-1 at forward and reverse biases. The main photoelectric parameters and the spectral distribution of actual quantum efficiency were measured at room temperature.

Original languageEnglish
Article number015014
JournalSemiconductor Science and Technology
Volume28
Issue number1
DOIs
Publication statusPublished - Jan 2013
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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