Analyses were conducted of various models and mechanisms of highly charged ion (HCI) and swift-heavy ion energy transfer into a solid target, such as hollow atom formation, charge screening, neutralization, shock wave generation, crater formation, and sputtering. A plasma model of space charge neutralization based on impact ionization of semiconductors at high electric fields was developed and applied to analyze HCI impacts on Si and W. Surface erosions of semiconductor and metal surfaces caused by HCI bombardments were studied by using a molecular dynamics simulation method, and the results were compared with experimental sputtering data.
|Journal||Physical Review A - Atomic, Molecular, and Optical Physics|
|Publication status||Published - Jun 9 2008|
ASJC Scopus subject areas
- Atomic and Molecular Physics, and Optics