Surface erosion and modification by highly charged ions

Z. Insepov, M. Terasawa, K. Takayama

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)

Abstract

Analyses were conducted of various models and mechanisms of highly charged ion (HCI) and swift-heavy ion energy transfer into a solid target, such as hollow atom formation, charge screening, neutralization, shock wave generation, crater formation, and sputtering. A plasma model of space charge neutralization based on impact ionization of semiconductors at high electric fields was developed and applied to analyze HCI impacts on Si and W. Surface erosions of semiconductor and metal surfaces caused by HCI bombardments were studied by using a molecular dynamics simulation method, and the results were compared with experimental sputtering data.

Original languageEnglish
Article number062901
JournalPhysical Review A - Atomic, Molecular, and Optical Physics
Volume77
Issue number6
DOIs
Publication statusPublished - Jun 9 2008

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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