Surface erosion by highly-charged ions

Z. Insepov, J. P. Allain, A. Hassanein, M. Terasawa

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

Interaction of single- and highly-charged ions (HCI) with solid surfaces is a key factor for the development of extreme ultra-violet lithography (EUVL) source devices. To understand the mechanisms of surface erosion by ion bombardment, molecular dynamics (MD) simulation models of hollow atom formation, charge neutralization, electric field screening, surface sputtering and crater formation were developed. These models were applied to studies of erosion of Au, W and Si surfaces irradiated by singly-charged Xe+ ions. Surface erosion of a Si(1 0 0) surface by low energy HCI bombardment has been modeled by studying interactions of slow Xeq+ ions. Further development and application of the MD methods to erosion of conductive surfaces by HCIs is analysed. The sputtering yield of insulators and semiconductors by HCI impacts significantly increases with the charge state of the ion and leads to surface roughening via crater formation for higher charge states. This phenomenon has been studied based on the mechanisms of "Coulomb explosion" and "thermal spike". The calculated sputtering yields of various surfaces bombarded by low energy single-charged Xe+ ions and highly-charged Xeq+ ions are compared with available experimental data.

Original languageEnglish
Pages (from-to)498-502
Number of pages5
JournalNuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume242
Issue number1-2
DOIs
Publication statusPublished - Jan 2006
Externally publishedYes

Fingerprint

erosion
Erosion
Ions
ions
Sputtering
sputtering
craters
Ion bombardment
bombardment
Molecular dynamics
molecular dynamics
ion impact
Extreme ultraviolet lithography
spikes
solid surfaces
Human computer interaction
Heavy ions
explosions
hollow
Explosions

Keywords

  • Craters
  • Extreme ultra-violet lithography
  • Highly-charged ions
  • Sputtering

ASJC Scopus subject areas

  • Surfaces, Coatings and Films
  • Instrumentation
  • Surfaces and Interfaces

Cite this

Surface erosion by highly-charged ions. / Insepov, Z.; Allain, J. P.; Hassanein, A.; Terasawa, M.

In: Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 242, No. 1-2, 01.2006, p. 498-502.

Research output: Contribution to journalArticle

@article{20d3082928ff44ce81d5627e070ae82e,
title = "Surface erosion by highly-charged ions",
abstract = "Interaction of single- and highly-charged ions (HCI) with solid surfaces is a key factor for the development of extreme ultra-violet lithography (EUVL) source devices. To understand the mechanisms of surface erosion by ion bombardment, molecular dynamics (MD) simulation models of hollow atom formation, charge neutralization, electric field screening, surface sputtering and crater formation were developed. These models were applied to studies of erosion of Au, W and Si surfaces irradiated by singly-charged Xe+ ions. Surface erosion of a Si(1 0 0) surface by low energy HCI bombardment has been modeled by studying interactions of slow Xeq+ ions. Further development and application of the MD methods to erosion of conductive surfaces by HCIs is analysed. The sputtering yield of insulators and semiconductors by HCI impacts significantly increases with the charge state of the ion and leads to surface roughening via crater formation for higher charge states. This phenomenon has been studied based on the mechanisms of {"}Coulomb explosion{"} and {"}thermal spike{"}. The calculated sputtering yields of various surfaces bombarded by low energy single-charged Xe+ ions and highly-charged Xeq+ ions are compared with available experimental data.",
keywords = "Craters, Extreme ultra-violet lithography, Highly-charged ions, Sputtering",
author = "Z. Insepov and Allain, {J. P.} and A. Hassanein and M. Terasawa",
year = "2006",
month = "1",
doi = "10.1016/j.nimb.2005.08.061",
language = "English",
volume = "242",
pages = "498--502",
journal = "Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms",
issn = "0168-583X",
publisher = "Elsevier",
number = "1-2",

}

TY - JOUR

T1 - Surface erosion by highly-charged ions

AU - Insepov, Z.

AU - Allain, J. P.

AU - Hassanein, A.

AU - Terasawa, M.

PY - 2006/1

Y1 - 2006/1

N2 - Interaction of single- and highly-charged ions (HCI) with solid surfaces is a key factor for the development of extreme ultra-violet lithography (EUVL) source devices. To understand the mechanisms of surface erosion by ion bombardment, molecular dynamics (MD) simulation models of hollow atom formation, charge neutralization, electric field screening, surface sputtering and crater formation were developed. These models were applied to studies of erosion of Au, W and Si surfaces irradiated by singly-charged Xe+ ions. Surface erosion of a Si(1 0 0) surface by low energy HCI bombardment has been modeled by studying interactions of slow Xeq+ ions. Further development and application of the MD methods to erosion of conductive surfaces by HCIs is analysed. The sputtering yield of insulators and semiconductors by HCI impacts significantly increases with the charge state of the ion and leads to surface roughening via crater formation for higher charge states. This phenomenon has been studied based on the mechanisms of "Coulomb explosion" and "thermal spike". The calculated sputtering yields of various surfaces bombarded by low energy single-charged Xe+ ions and highly-charged Xeq+ ions are compared with available experimental data.

AB - Interaction of single- and highly-charged ions (HCI) with solid surfaces is a key factor for the development of extreme ultra-violet lithography (EUVL) source devices. To understand the mechanisms of surface erosion by ion bombardment, molecular dynamics (MD) simulation models of hollow atom formation, charge neutralization, electric field screening, surface sputtering and crater formation were developed. These models were applied to studies of erosion of Au, W and Si surfaces irradiated by singly-charged Xe+ ions. Surface erosion of a Si(1 0 0) surface by low energy HCI bombardment has been modeled by studying interactions of slow Xeq+ ions. Further development and application of the MD methods to erosion of conductive surfaces by HCIs is analysed. The sputtering yield of insulators and semiconductors by HCI impacts significantly increases with the charge state of the ion and leads to surface roughening via crater formation for higher charge states. This phenomenon has been studied based on the mechanisms of "Coulomb explosion" and "thermal spike". The calculated sputtering yields of various surfaces bombarded by low energy single-charged Xe+ ions and highly-charged Xeq+ ions are compared with available experimental data.

KW - Craters

KW - Extreme ultra-violet lithography

KW - Highly-charged ions

KW - Sputtering

UR - http://www.scopus.com/inward/record.url?scp=28544448235&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=28544448235&partnerID=8YFLogxK

U2 - 10.1016/j.nimb.2005.08.061

DO - 10.1016/j.nimb.2005.08.061

M3 - Article

VL - 242

SP - 498

EP - 502

JO - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

SN - 0168-583X

IS - 1-2

ER -