We have calculated, from first principles, two-dimensional mobility fluctuations in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to scattering between the induced charge carriers and the interfacial traps. The results are used to evaluate the behavior of the 1/f noise in MOSFETs, particularly the gate-bias dependence of both the functional form and magnitude of the noise power spectrum. Similar to previous calculations that assumed the noise to be due to number fluctuations, the new model accurately accounts for the change of the spectral distribution of noise at different gate biases. However, when the surface mobility fluctuations are included in the noise computation, a much better fit to the experimentally measured noise power magnitude is obtained.
ASJC Scopus subject areas
- Condensed Matter Physics