Abstract
We have calculated, from first principles, two-dimensional mobility fluctuations in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to scattering between the induced charge carriers and the interfacial traps. The results are used to evaluate the behavior of the 1/f noise in MOSFETs, particularly the gate-bias dependence of both the functional form and magnitude of the noise power spectrum. Similar to previous calculations that assumed the noise to be due to number fluctuations, the new model accurately accounts for the change of the spectral distribution of noise at different gate biases. However, when the surface mobility fluctuations are included in the noise computation, a much better fit to the experimentally measured noise power magnitude is obtained.
| Original language | English |
|---|---|
| Pages (from-to) | 6343-6347 |
| Number of pages | 5 |
| Journal | Physical Review B |
| Volume | 35 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - Jan 1 1987 |
Fingerprint
ASJC Scopus subject areas
- Condensed Matter Physics
Cite this
Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors. / Surya, C.; Hsiang, T. Y.
In: Physical Review B, Vol. 35, No. 12, 01.01.1987, p. 6343-6347.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors
AU - Surya, C.
AU - Hsiang, T. Y.
PY - 1987/1/1
Y1 - 1987/1/1
N2 - We have calculated, from first principles, two-dimensional mobility fluctuations in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to scattering between the induced charge carriers and the interfacial traps. The results are used to evaluate the behavior of the 1/f noise in MOSFETs, particularly the gate-bias dependence of both the functional form and magnitude of the noise power spectrum. Similar to previous calculations that assumed the noise to be due to number fluctuations, the new model accurately accounts for the change of the spectral distribution of noise at different gate biases. However, when the surface mobility fluctuations are included in the noise computation, a much better fit to the experimentally measured noise power magnitude is obtained.
AB - We have calculated, from first principles, two-dimensional mobility fluctuations in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to scattering between the induced charge carriers and the interfacial traps. The results are used to evaluate the behavior of the 1/f noise in MOSFETs, particularly the gate-bias dependence of both the functional form and magnitude of the noise power spectrum. Similar to previous calculations that assumed the noise to be due to number fluctuations, the new model accurately accounts for the change of the spectral distribution of noise at different gate biases. However, when the surface mobility fluctuations are included in the noise computation, a much better fit to the experimentally measured noise power magnitude is obtained.
UR - http://www.scopus.com/inward/record.url?scp=4243352485&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=4243352485&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.35.6343
DO - 10.1103/PhysRevB.35.6343
M3 - Article
VL - 35
SP - 6343
EP - 6347
JO - Physical Review B
JF - Physical Review B
SN - 1098-0121
IS - 12
ER -