Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors

C. Surya, T. Y. Hsiang

Research output: Contribution to journalArticle

60 Citations (Scopus)

Abstract

We have calculated, from first principles, two-dimensional mobility fluctuations in metal-oxide-semiconductor field-effect transistors (MOSFETs) due to scattering between the induced charge carriers and the interfacial traps. The results are used to evaluate the behavior of the 1/f noise in MOSFETs, particularly the gate-bias dependence of both the functional form and magnitude of the noise power spectrum. Similar to previous calculations that assumed the noise to be due to number fluctuations, the new model accurately accounts for the change of the spectral distribution of noise at different gate biases. However, when the surface mobility fluctuations are included in the noise computation, a much better fit to the experimentally measured noise power magnitude is obtained.

Original languageEnglish
Pages (from-to)6343-6347
Number of pages5
JournalPhysical Review B
Volume35
Issue number12
DOIs
Publication statusPublished - Jan 1 1987

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MOSFET devices
metal oxide semiconductors
field effect transistors
Power spectrum
Charge carriers
Scattering
noise spectra
power spectra
charge carriers
traps
scattering

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Surface mobility fluctuations in metal-oxide-semiconductor field-effect transistors. / Surya, C.; Hsiang, T. Y.

In: Physical Review B, Vol. 35, No. 12, 01.01.1987, p. 6343-6347.

Research output: Contribution to journalArticle

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