TY - JOUR
T1 - Surface modification of TiO2 photoanodes with In3+ using a simple soaking technique for enhancing the efficiency of dye-sensitized solar cells
AU - Baptayev, Bakhytzhan
AU - Adilov, Salimgerey
AU - Balanay, Mannix P.
N1 - Funding Information:
This work was supported by the Ministry of Education and Science of the Republic of Kazakhstan ( AP05134515 ).
Publisher Copyright:
© 2020 Elsevier B.V.
PY - 2020/5/1
Y1 - 2020/5/1
N2 - Indium-doped TiO2 photoanode for dye-sensitized solar cells are prepared using a simple surface-doping technique by soaking the TiO2 film in acidic In3+ solution at 70 °C for 30, 45 and 60 min followed by sintering at 450 °C. Structural characterization of In-doped TiO2 films by SEM, TEM, EDX, XRD and Raman spectroscopy revealed the successful attachment of Indium to the surface of TiO2 and that the amount of In dopant is proportional to the soaking time. The PCE of the devices fabricated from In-doped TiO2 with a soaking time of 30 min produced an increase of 18.0 % compared to the undoped cells. Charge extraction analysis at open-circuit revealed that surface-doping with indium shifts TiO2 band edge downward. However, the increase in VOC was found as the net effect of negative movement of CB and retarded recombination caused by TiO2 surface passivation via the In dopant.
AB - Indium-doped TiO2 photoanode for dye-sensitized solar cells are prepared using a simple surface-doping technique by soaking the TiO2 film in acidic In3+ solution at 70 °C for 30, 45 and 60 min followed by sintering at 450 °C. Structural characterization of In-doped TiO2 films by SEM, TEM, EDX, XRD and Raman spectroscopy revealed the successful attachment of Indium to the surface of TiO2 and that the amount of In dopant is proportional to the soaking time. The PCE of the devices fabricated from In-doped TiO2 with a soaking time of 30 min produced an increase of 18.0 % compared to the undoped cells. Charge extraction analysis at open-circuit revealed that surface-doping with indium shifts TiO2 band edge downward. However, the increase in VOC was found as the net effect of negative movement of CB and retarded recombination caused by TiO2 surface passivation via the In dopant.
KW - Photovoltage decay
KW - Recombination reactions
KW - Surface-doping
KW - X-ray spectroscopy
UR - http://www.scopus.com/inward/record.url?scp=85081229727&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85081229727&partnerID=8YFLogxK
U2 - 10.1016/j.jphotochem.2020.112468
DO - 10.1016/j.jphotochem.2020.112468
M3 - Article
AN - SCOPUS:85081229727
SN - 1010-6030
VL - 394
JO - Journal of Photochemistry and Photobiology A: Chemistry
JF - Journal of Photochemistry and Photobiology A: Chemistry
M1 - 112468
ER -