Surface processing by gas cluster ion beams at the atomic (molecular) level

I. Yamada; J. Matsuo; Z. Insepov; D. Takeuchi; M. Akizuki; N. Toyoda

doi:10.1116/1.580389

Surface processing by gas cluster ion beams at the atomic (molecular) level

I. Yamada, J. Matsuo, Z. Insepov, D. Takeuchi, M. Akizuki, N. Toyoda

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Abstract

Gas cluster ion beam techniques have been developed for atomic and molecular level surface modification processing. Shallow implantation, high yield sputtering, surface smoothing, and low damage surface cleaning have been demonstrated experimentally. This article reports recent results concerning surface treatments that are distinctly different from those produced by conventional monomer ion irradiation. Possible applications of gas cluster ion beam processing to new areas of surface modifications are suggested.

Original language	English
Pages (from-to)	781-785
Number of pages	5
Journal	Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films
Volume	14
Issue number	3
DOIs	https://doi.org/10.1116/1.580389
Publication status	Published - Jan 1 1996

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ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films

Cite this

Yamada, I., Matsuo, J., Insepov, Z., Takeuchi, D., Akizuki, M., & Toyoda, N. (1996). Surface processing by gas cluster ion beams at the atomic (molecular) level. Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, 14(3), 781-785. https://doi.org/10.1116/1.580389

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10.1116/1.580389