Surface recombination in organic solar cells: Intrinsic vs. doped active layer

Gulnur Akhtanova, Hryhorii P. Parkhomenko, Joachim Vollbrecht, Andrii I. Mostovyi, Nora Schopp, Viktor Brus

Research output: Contribution to journalArticlepeer-review

2 Citations (Scopus)

Abstract

This study extends the analytical model of surface recombination in organic solar cells with an intrinsic active bulk-heterojunction layer. The key finding of the developed multi-mechanism recombination model accounting for the intrinsic active layer is that the slope of VOC vs. ln(Light Intensity) cannot be lower than 1.0 kT/q even at the extremely high concentrations of surface traps. We revealed the difference in recombination-related parameters determined in the scope of the multi-mechanism recombination model for the doped or intrinsic active layer and highlighted the importance of identifying the doping level of the active layer material. This is demonstrated by a synergy of comprehensive simulation and experimental analysis of organic solar cells with donor: acceptor blends: (PM6:Y6, PTB7-Th:COTIC-4F, PTB7-Th:O-IDTBR and PTB7-Th:ITIC-4F).

Original languageEnglish
Article number107183
JournalOrganic Electronics
Volume137
DOIs
Publication statusPublished - Feb 2025

Keywords

  • Non-fullerene acceptors
  • Non-geminate recombination
  • Organic bulk heterojunction solar cells
  • Surface recombination

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • General Chemistry
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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