Abstract
This study extends the analytical model of surface recombination in organic solar cells with an intrinsic active bulk-heterojunction layer. The key finding of the developed multi-mechanism recombination model accounting for the intrinsic active layer is that the slope of VOC vs. ln(Light Intensity) cannot be lower than 1.0 kT/q even at the extremely high concentrations of surface traps. We revealed the difference in recombination-related parameters determined in the scope of the multi-mechanism recombination model for the doped or intrinsic active layer and highlighted the importance of identifying the doping level of the active layer material. This is demonstrated by a synergy of comprehensive simulation and experimental analysis of organic solar cells with donor: acceptor blends: (PM6:Y6, PTB7-Th:COTIC-4F, PTB7-Th:O-IDTBR and PTB7-Th:ITIC-4F).
| Original language | English |
|---|---|
| Article number | 107183 |
| Journal | Organic Electronics |
| Volume | 137 |
| DOIs | |
| Publication status | Published - Feb 2025 |
Keywords
- Non-fullerene acceptors
- Non-geminate recombination
- Organic bulk heterojunction solar cells
- Surface recombination
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Biomaterials
- General Chemistry
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
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