Abstract
This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.
| Original language | English |
|---|---|
| Title of host publication | Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting |
| Publisher | Publ by IEEE |
| Pages | 213-214 |
| Number of pages | 2 |
| ISBN (Print) | 0780312635 |
| Publication status | Published - 1993 |
| Externally published | Yes |
| Event | Annual Meeting of the IEEE Lasers and Electro-Optics Society - San jose, CA, USA Duration: Nov 15 1993 → Nov 18 1993 |
Other
| Other | Annual Meeting of the IEEE Lasers and Electro-Optics Society |
|---|---|
| City | San jose, CA, USA |
| Period | 11/15/93 → 11/18/93 |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
System-level considerations for OEIC photoreceiver design. / Morikuni, J. J.; Tong, M.; Ketterson, A. A.; Nummila, K.; Kang, S. M.; Adesida, I.
Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Publ by IEEE, 1993. p. 213-214.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
}
TY - GEN
T1 - System-level considerations for OEIC photoreceiver design
AU - Morikuni, J. J.
AU - Tong, M.
AU - Ketterson, A. A.
AU - Nummila, K.
AU - Kang, S. M.
AU - Adesida, I.
PY - 1993
Y1 - 1993
N2 - This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.
AB - This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.
UR - http://www.scopus.com/inward/record.url?scp=0027814615&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027814615&partnerID=8YFLogxK
M3 - Conference contribution
SN - 0780312635
SP - 213
EP - 214
BT - Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
PB - Publ by IEEE
ER -