System-level considerations for OEIC photoreceiver design

J. J. Morikuni; M. Tong; A. A. Ketterson; K. Nummila; S. M. Kang; I. Adesida

System-level considerations for OEIC photoreceiver design

J. J. Morikuni, M. Tong, A. A. Ketterson, K. Nummila, S. M. Kang, I. Adesida

Nazarbayev University

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.

Original language	English
Title of host publication	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting
Publisher	Publ by IEEE
Pages	213-214
Number of pages	2
ISBN (Print)	0780312635
Publication status	Published - Dec 1 1993
Event	Annual Meeting of the IEEE Lasers and Electro-Optics Society - San jose, CA, USA Duration: Nov 15 1993 → Nov 18 1993

Publication series

Name	Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting

Other

Other	Annual Meeting of the IEEE Lasers and Electro-Optics Society
City	San jose, CA, USA
Period	11/15/93 → 11/18/93

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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Cite this

System-level considerations for OEIC photoreceiver design. / Morikuni, J. J.; Tong, M.; Ketterson, A. A.; Nummila, K.; Kang, S. M.; Adesida, I.

Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Publ by IEEE, 1993. p. 213-214 (Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Morikuni, JJ, Tong, M, Ketterson, AA, Nummila, K, Kang, SM & Adesida, I 1993, System-level considerations for OEIC photoreceiver design. in Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting. Conference Proceedings - Lasers and Electro-Optics Society Annual Meeting, Publ by IEEE, pp. 213-214, Annual Meeting of the IEEE Lasers and Electro-Optics Society, San jose, CA, USA, 11/15/93.

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AB - This paper addresses various system-level aspects of OEIC photoreceiver design. Specifically, we compare and contrast monolithic FET-based photoreceivers that use the conventional depletion-only technology and receivers utilizing both enhancement-and depletion-mode (E-D) transistors. Both receivers considered are MSM-MODFET based, due to the well-recognized merits of each devices; however,our discussion is general enough to be applied to any FET-based photoreceiver. Since these photoreceivers are targeted for short to medium distance optical interconnections, they operate at the 850 nm wavelength. This is advantageous because it allows use of the relatively mature GaAs technology, rather than the less-developed InP materials system.

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