@inproceedings{067d0ceb3f0b4498af3e952dcacc6fcf,
title = "Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier",
abstract = "The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C.",
keywords = "Amplifier, GaN, Gallium nitride, HEMT, Low noise, MMIC, SiC, Wide bandgap",
author = "Schwindt, {R. S.} and V. Kumar and O. Aktas and Lee, {J. W.} and I. Adesida",
note = "Copyright: Copyright 2011 Elsevier B.V., All rights reserved.; IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium ; Conference date: 24-10-2004 Through 27-10-2004",
year = "2004",
doi = "10.1109/CSICS.2004.1392536",
language = "English",
isbn = "0780386167",
series = "Technical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC",
pages = "201--203",
booktitle = "IEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary",
}