Temperature-dependence of a GaN-based HEMT monolithic X-band low noise amplifier

R. S. Schwindt, V. Kumar, O. Aktas, J. W. Lee, I. Adesida

Research output: Chapter in Book/Report/Conference proceedingConference contribution

12 Citations (Scopus)

Abstract

The temperature-dependent performance of a fully monolithic AlGaN/GaN HEMT-based X-band low noise amplifier is reported. The circuit demonstrated a noise figure of 3.5 dB, gain of 7.5 dB, input return loss of -7.5 dB, and output return loss of -15 dB at 8.5 GHz at room temperature. The noise figure at 9.5 GHz increased from 2.5 dB at 43°C to 5.0 dB at 150°C.

Original languageEnglish
Title of host publicationIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium, 26th Anniversary
Subtitle of host publicationCompounding Your Chips in Monterey - Technical Digest 2004
Pages201-203
Number of pages3
DOIs
Publication statusPublished - 2004
EventIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium - Monterey, CA, United States
Duration: Oct 24 2004Oct 27 2004

Publication series

NameTechnical Digest - IEEE Compound Semiconductor Integrated Circuit Symposium, CSIC
ISSN (Print)1550-8781

Other

OtherIEEE Compound Semiconductor Integrated Circuit Symposium; 2004 IEEE CSIC Symposium
CountryUnited States
CityMonterey, CA
Period10/24/0410/27/04

Keywords

  • Amplifier
  • GaN
  • Gallium nitride
  • HEMT
  • Low noise
  • MMIC
  • SiC
  • Wide bandgap

ASJC Scopus subject areas

  • Engineering(all)

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