Temperature dependent electrical properties and barrier parameters of photosensitive heterojunctions n-TiN/p-Cd1-xZnxTe

M. M. Solovan, V. V. Brus, P. D. Maryanchuk, M. I. Ilashchuk, S. L. Abashin, Z. D. Kovalyuk

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12 Citations (Scopus)


Photosensitive heterojunctions n-TiN/p-Cd1-xZnxTe were fabricated by the deposition of titanium nitride thin films by means of dc reactive magnetron sputtering onto cleaved single crystal substrates Cd1-xZnxTe with p-type conductivity. We investigated the temperature dependence of the height of the potential barrier and the series resistance of the n-TiN/p-Cd1-xZnxTe heterojunctions. The dominating current transport mechanisms through the heterojunctions at forward and reverse bias were determined. The n-TiN/p-Cd1-xZnxTe heterojunctions possessed a significantly higher value open circuit voltage Voc = 0.65 V compared to the open circuit voltage Voc = 0.35 V of the n-TiN/p-CdTe heterojunctions under the same illumination conditions [Solovan et al 2014 Semicon. Sci. Technol. 29 015007].

Original languageEnglish
Article number075006
JournalSemiconductor Science and Technology
Issue number7
Publication statusPublished - Jul 1 2015
Externally publishedYes


  • CdZnTe
  • Current transport
  • Heterojunction
  • Interface states

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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