The effect of hot-electron injection on the properties of flicker noise in n-channel MOSFETs

Ching Ho Cheng, Charles Surya

Research output: Contribution to journalReview articlepeer-review

23 Citations (Scopus)


We have studied the degradation of drain current and the properties of flicker noise in n-channel Lightly-Doped Drain (LDD) MOSFETs due to hot-electron injection. The two types of devices examined were shallow double-diffused drain and deep double-diffused drain MOSFETs. It was found that the flicker noise level is highly sensitive to hot-electron injection. The increase in flicker noise and drain current degradation in the shallow double-diffused drain devices were significantly more than the deep double-diffused drain devices, indicating improved hot-electron hardness in the latter. However, the pre-stressed flicker noise magnitudes in the deep double-diffused drain transistors were about two orders of magnitude higher than the shallow double-diffused drain transistors. This is possibly due to creation of defects during the high energy phosphorus implantation step in the fabrication of the deep drain junction.

Original languageEnglish
Pages (from-to)475-479
Number of pages5
JournalSolid State Electronics
Issue number3
Publication statusPublished - Jan 1 1993
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

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