@inproceedings{002ed5a465064e4ab561412ea624fb89,
title = "The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si",
abstract = "We report the results of the investigation of electrical properties of photosensitive anisotype heterojunctions n- TiN/p-Si with different conditions of Si surface treatments. The analysis of the measured I-V characteristics of the heterojunctions under dark conditions has shown that values of the height of the potential barrier and series resistance decreases with the decrease of the thickness of native oxide. The dominating tunnel-recombination mechanism of current transport through the heterojunctions under investigation was determined to be independent on the conditions of surface treatment. We have established that the n-TiN/p-Si heterojunction oxidized in bidistilled water at 70°C for 30 s possesses the lowest density of interface states and, thus lowest surface recombination velocity.",
keywords = "quantum efficiency, surface passivation, thin film, TiN",
author = "Solovan, {M. N.} and Brus, {V. V.} and Maryanchuk, {P. D.}",
year = "2013",
doi = "10.1117/12.2048631",
language = "English",
isbn = "9780819499936",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
publisher = "SPIE",
booktitle = "Eleventh International Conference on Correlation Optics",
address = "United States",
note = "11th International Conference on Correlation Optics ; Conference date: 18-09-2013 Through 21-09-2013",
}