The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si

M. N. Solovan, V. V. Brus, P. D. Maryanchuk

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

We report the results of the investigation of electrical properties of photosensitive anisotype heterojunctions n- TiN/p-Si with different conditions of Si surface treatments. The analysis of the measured I-V characteristics of the heterojunctions under dark conditions has shown that values of the height of the potential barrier and series resistance decreases with the decrease of the thickness of native oxide. The dominating tunnel-recombination mechanism of current transport through the heterojunctions under investigation was determined to be independent on the conditions of surface treatment. We have established that the n-TiN/p-Si heterojunction oxidized in bidistilled water at 70°C for 30 s possesses the lowest density of interface states and, thus lowest surface recombination velocity.

Original languageEnglish
Title of host publicationEleventh International Conference on Correlation Optics
PublisherSPIE
ISBN (Print)9780819499936
DOIs
Publication statusPublished - 2013
Externally publishedYes
Event11th International Conference on Correlation Optics - Chernivtsi, Ukraine
Duration: Sep 18 2013Sep 21 2013

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume9066
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

Conference11th International Conference on Correlation Optics
CountryUkraine
CityChernivtsi
Period9/18/139/21/13

Keywords

  • quantum efficiency
  • surface passivation
  • thin film
  • TiN

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Fingerprint Dive into the research topics of 'The effect of surface treatment on electrical and photoelectrical properies of anisotype heterojunctions n-TiN/p-Si'. Together they form a unique fingerprint.

Cite this