The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs

Doo Hyeb Youn, Jae Hoon Lee, Vipan Kumar, Kyu Seok Lee, Jung Hee Lee, Ilesanmi Adesida

Research output: Contribution to journalArticlepeer-review

13 Citations (Scopus)

Abstract

In order to improve the electrical characteristics of AlGaN-GaN heterostructures for applications in high electron mobility transistors (HEMTs), high-quality AlGaN-GaN was grown by way of metal-organic chemical vapor deposition on sapphire. We applied isoelectronic Al doping into the GaN-channel layers of modified AlGaN-Al-doped GaN channel-GaN heterostructures. We then compared the electrical performance of the fabricated heterostructures with those of conventional AlGaN-GaN heterostructures. The AlGaN-GaN HEMTs that were fabricated achieved power densities of up to 4.2 W/mm, some of the highest values ever reported for 0.25-μm gate length AlGaN-GaN HEMTs. These devices exhibited a maximum drain current density of 1370 mA/mm, a high transconductance of 230 mS/mm, a short-circuit current gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 102 GHz.

Original languageEnglish
Pages (from-to)785-789
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number5
DOIs
Publication statusPublished - May 2004

Keywords

  • Field-effect transistors (FET)
  • Gallium nitride
  • Microwave power

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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