The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs

Doo Hyeb Youn, Jae Hoon Lee, Vipan Kumar, Kyu Seok Lee, Jung Hee Lee, Ilesanmi Adesida

Research output: Contribution to journalArticle

14 Citations (Scopus)

Abstract

In order to improve the electrical characteristics of AlGaN-GaN heterostructures for applications in high electron mobility transistors (HEMTs), high-quality AlGaN-GaN was grown by way of metal-organic chemical vapor deposition on sapphire. We applied isoelectronic Al doping into the GaN-channel layers of modified AlGaN-Al-doped GaN channel-GaN heterostructures. We then compared the electrical performance of the fabricated heterostructures with those of conventional AlGaN-GaN heterostructures. The AlGaN-GaN HEMTs that were fabricated achieved power densities of up to 4.2 W/mm, some of the highest values ever reported for 0.25-μm gate length AlGaN-GaN HEMTs. These devices exhibited a maximum drain current density of 1370 mA/mm, a high transconductance of 230 mS/mm, a short-circuit current gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 102 GHz.

Original languageEnglish
Pages (from-to)785-789
Number of pages5
JournalIEEE Transactions on Electron Devices
Volume51
Issue number5
DOIs
Publication statusPublished - May 2004
Externally publishedYes

Fingerprint

High electron mobility transistors
high electron mobility transistors
Heterojunctions
Doping (additives)
Fabrication
fabrication
optimization
transconductance
short circuit currents
metalorganic chemical vapor deposition
radiant flux density
Drain current
Organic chemicals
sapphire
Cutoff frequency
Transconductance
cut-off
Sapphire
Short circuit currents
current density

Keywords

  • Field-effect transistors (FET)
  • Gallium nitride
  • Microwave power

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Physics and Astronomy (miscellaneous)

Cite this

The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs. / Youn, Doo Hyeb; Lee, Jae Hoon; Kumar, Vipan; Lee, Kyu Seok; Lee, Jung Hee; Adesida, Ilesanmi.

In: IEEE Transactions on Electron Devices, Vol. 51, No. 5, 05.2004, p. 785-789.

Research output: Contribution to journalArticle

Youn, Doo Hyeb ; Lee, Jae Hoon ; Kumar, Vipan ; Lee, Kyu Seok ; Lee, Jung Hee ; Adesida, Ilesanmi. / The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs. In: IEEE Transactions on Electron Devices. 2004 ; Vol. 51, No. 5. pp. 785-789.
@article{eae95bd5dcde4d6f809e5b2c26960854,
title = "The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs",
abstract = "In order to improve the electrical characteristics of AlGaN-GaN heterostructures for applications in high electron mobility transistors (HEMTs), high-quality AlGaN-GaN was grown by way of metal-organic chemical vapor deposition on sapphire. We applied isoelectronic Al doping into the GaN-channel layers of modified AlGaN-Al-doped GaN channel-GaN heterostructures. We then compared the electrical performance of the fabricated heterostructures with those of conventional AlGaN-GaN heterostructures. The AlGaN-GaN HEMTs that were fabricated achieved power densities of up to 4.2 W/mm, some of the highest values ever reported for 0.25-μm gate length AlGaN-GaN HEMTs. These devices exhibited a maximum drain current density of 1370 mA/mm, a high transconductance of 230 mS/mm, a short-circuit current gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 102 GHz.",
keywords = "Field-effect transistors (FET), Gallium nitride, Microwave power",
author = "Youn, {Doo Hyeb} and Lee, {Jae Hoon} and Vipan Kumar and Lee, {Kyu Seok} and Lee, {Jung Hee} and Ilesanmi Adesida",
year = "2004",
month = "5",
doi = "10.1109/TED.2004.825813",
language = "English",
volume = "51",
pages = "785--789",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "5",

}

TY - JOUR

T1 - The effects of isoelectronic Al doping and process optimization for the fabrication of high-power AlGaN-GaN HEMTs

AU - Youn, Doo Hyeb

AU - Lee, Jae Hoon

AU - Kumar, Vipan

AU - Lee, Kyu Seok

AU - Lee, Jung Hee

AU - Adesida, Ilesanmi

PY - 2004/5

Y1 - 2004/5

N2 - In order to improve the electrical characteristics of AlGaN-GaN heterostructures for applications in high electron mobility transistors (HEMTs), high-quality AlGaN-GaN was grown by way of metal-organic chemical vapor deposition on sapphire. We applied isoelectronic Al doping into the GaN-channel layers of modified AlGaN-Al-doped GaN channel-GaN heterostructures. We then compared the electrical performance of the fabricated heterostructures with those of conventional AlGaN-GaN heterostructures. The AlGaN-GaN HEMTs that were fabricated achieved power densities of up to 4.2 W/mm, some of the highest values ever reported for 0.25-μm gate length AlGaN-GaN HEMTs. These devices exhibited a maximum drain current density of 1370 mA/mm, a high transconductance of 230 mS/mm, a short-circuit current gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 102 GHz.

AB - In order to improve the electrical characteristics of AlGaN-GaN heterostructures for applications in high electron mobility transistors (HEMTs), high-quality AlGaN-GaN was grown by way of metal-organic chemical vapor deposition on sapphire. We applied isoelectronic Al doping into the GaN-channel layers of modified AlGaN-Al-doped GaN channel-GaN heterostructures. We then compared the electrical performance of the fabricated heterostructures with those of conventional AlGaN-GaN heterostructures. The AlGaN-GaN HEMTs that were fabricated achieved power densities of up to 4.2 W/mm, some of the highest values ever reported for 0.25-μm gate length AlGaN-GaN HEMTs. These devices exhibited a maximum drain current density of 1370 mA/mm, a high transconductance of 230 mS/mm, a short-circuit current gain cutoff frequency (fT) of 67 GHz, and a maximum frequency of oscillation (fmax) of 102 GHz.

KW - Field-effect transistors (FET)

KW - Gallium nitride

KW - Microwave power

UR - http://www.scopus.com/inward/record.url?scp=2442499520&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=2442499520&partnerID=8YFLogxK

U2 - 10.1109/TED.2004.825813

DO - 10.1109/TED.2004.825813

M3 - Article

AN - SCOPUS:2442499520

VL - 51

SP - 785

EP - 789

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 5

ER -