The effects of reactive ion etching-induced damage on the characteristics of ohmic contacts to n-type GaN

A. T. Ping, Q. Chen, J. W. Yang, M. Asif Khan, I. Adesida

Research output: Contribution to journalArticlepeer-review

119 Citations (Scopus)

Abstract

The effects of reactive ion etching n-GaN surfaces with both SiCl4 and Ar plasmas have been investigated using transmission line measurements. The measurements were made from ohmic contacts consisting of Al (as-deposited) and Ti/Al (as-deposited and rapid thermal annealed). The contact resisitance, specific contact resistance, and sheet resistance were investigated as functions of the dc plasma sel dias voltage and etch time. The contact resistance extracted from contacts fabricated on surfaces etched with SiCl4 was found to be improved over the unetched samples for all conditions investigated. Dry etching the surface with Ar severely degraded the contact resistance over the unetched sample except at the lower self-bias voltages. Rapid thermal annealing of etched samples prior to Al deposition was found to be effective in removing some of the reactive ion etching/SiCl4-induced damage.

Original languageEnglish
Pages (from-to)261-265
Number of pages5
JournalJournal of Electronic Materials
Volume27
Issue number4
DOIs
Publication statusPublished - Apr 1998
Externally publishedYes

Keywords

  • GaN
  • Ohmic contacts
  • Reactive ion etching (RIE)

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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