The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, P. Fay, I. Adesida

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

A comparative study of two types of metamorphic double heterojunction long-wavelength photodiodes on GaAs substrates is performed in terms of their bandwidths and responsivities. A P-i-I-N heterostructure with a large bandgap drift layer (I-InAlAs) at the cathode end of the photoabsorption region (i-InGaAs) is compared experimentally and theoretically to a P-i-N structure without a drift layer. Both types of photodiodes were fabricated using an InGaAs-InGaAlAs-InAlAs double heterostructure design to simultaneously achieve high bandwidths and high responsivities. The inclusion of an I-InAlAs drift region resulted in P-i-I-N photodiodes with larger bandwidths than P-i-N photodiodes with the same areas, or conversely a P-i-I-N photodiode can be made larger than a comparable P-i-N photodiode, but achieve the same bandwidth. Therefore, P-i-I-N photodiodes provide larger optical fiber alignment tolerances and better coupling efficiency than P-i-N photodiodes with the same bandwidths. P-i-I-N photodiodes with 10-μm-diameter optical windows typically exhibited low dark currents of 500 pA at 5-V bias, responsivities of 0.6 A/W, and a - 3-dB bandwidth of 38 GHz for 1.55-μm operation.

Original languageEnglish
Pages (from-to)1097-1099
Number of pages3
JournalIEEE Photonics Technology Letters
Volume13
Issue number10
DOIs
Publication statusPublished - Oct 2001
Externally publishedYes

Fingerprint

Photodiodes
photodiodes
Energy gap
Wavelength
wavelengths
bandwidth
Bandwidth
Heterojunctions
Dark currents
photoabsorption
dark current
Optical fibers
heterojunctions
Cathodes
optical fibers
cathodes
alignment
inclusions
Substrates

Keywords

  • GaAs
  • InGaAs
  • Metamorphic
  • P-i-I-N
  • P-i-N
  • Photodiodes

ASJC Scopus subject areas

  • Electrical and Electronic Engineering
  • Atomic and Molecular Physics, and Optics
  • Physics and Astronomy (miscellaneous)

Cite this

The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes. / Jang, J. H.; Cueva, G.; Dumka, D. C.; Hoke, W. E.; Lemonias, P. J.; Fay, P.; Adesida, I.

In: IEEE Photonics Technology Letters, Vol. 13, No. 10, 10.2001, p. 1097-1099.

Research output: Contribution to journalArticle

Jang, J. H. ; Cueva, G. ; Dumka, D. C. ; Hoke, W. E. ; Lemonias, P. J. ; Fay, P. ; Adesida, I. / The impact of a large bandgap drift region in long-wavelength metamorphic photodiodes. In: IEEE Photonics Technology Letters. 2001 ; Vol. 13, No. 10. pp. 1097-1099.
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