The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs

X. Y. Chen, A. M.C. Ng, F. Fang, A. B. Djurišić, W. K. Chan, H. L. Tam, K. W. Cheah, P. W.K. Fong, H. F. Lui, C. Surya

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We have studied the influence of the seed layer on the growth of ZnO nanorods on GaN by vapor deposition and the performance of the p-GaN/ZnO nanorod light emitting diodes (LEDs). The seed layer had a significant influence on the orientation and density of the ZnO nanorods as well as on the current-voltage curves of the devices, while optical properties exhibited a weaker dependence on the seed layer. A uniform and bright yellow electroluminescence was observed in all the devices, while the photoluminescence spectra exhibited a prominent UV emission and a weak green emission.

Original languageEnglish
Pages (from-to)H308-H311
JournalJournal of the Electrochemical Society
Issue number3
Publication statusPublished - Feb 16 2010
Externally publishedYes


ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

Cite this

Chen, X. Y., Ng, A. M. C., Fang, F., Djurišić, A. B., Chan, W. K., Tam, H. L., Cheah, K. W., Fong, P. W. K., Lui, H. F., & Surya, C. (2010). The influence of the ZnO seed layer on the ZnO Nanorod/GaN LEDs. Journal of the Electrochemical Society, 157(3), H308-H311.