The range of light ions in polymeric resists

Ilesanmi Adesida, Leonidas Karapiperis

Research output: Contribution to journalArticle

15 Citations (Scopus)

Abstract

The technique of ion beam lithography coupled with calculations using a Monte Carlo computer program for ion penetration in solids have been used to obtain various range parameters of hydrogen, helium, lithium, beryllium, boron, and carbon ions in polymethyl methacrylate resist. In the experiment, the resist is bombarded with ions and then developed in a 1: 1 solution of methyl isobutyl ketone and isopropyl alcohol with the developed depth monitored as a function of time. The saturated developed depth is approximated as the mean path length of the ion in the resist. The physical basis of this approximation is discussed. The projected ranges and straggles of the specified ions at energies of 5-300 keV obtained by fitting the experimental data to the total range using a Monte Carlo program are presented. These range data can be used as guidelines to determine the resist mask thickness for ion implantation and for choosing resist thickness in ion beam lithography.

Original languageEnglish
Pages (from-to)1801-1807
Number of pages7
JournalJournal of Applied Physics
Volume56
Issue number6
DOIs
Publication statusPublished - 1984
Externally publishedYes

Fingerprint

light ions
ions
lithography
ion beams
isopropyl alcohol
beryllium
polymethyl methacrylate
ketones
ion implantation
boron
alcohols
masks
penetration
lithium
helium
computer programs
carbon
hydrogen
approximation
energy

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

The range of light ions in polymeric resists. / Adesida, Ilesanmi; Karapiperis, Leonidas.

In: Journal of Applied Physics, Vol. 56, No. 6, 1984, p. 1801-1807.

Research output: Contribution to journalArticle

Adesida, Ilesanmi ; Karapiperis, Leonidas. / The range of light ions in polymeric resists. In: Journal of Applied Physics. 1984 ; Vol. 56, No. 6. pp. 1801-1807.
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