Abstract
An analysis is made of the collisions of electrons and holes with impurity atoms and excitons. Approximate formulas are given for the description of the contribution of these processes to the conductivity and collision frequency. A comparison is made with the experimental data for germanium at helium temperatures. The influence of the anisotropy and the role of the nonadditivity of the scattering mechanisms are examined. It is shown that the interaction of charges with excitons may increase the equilibrium free-charge density and thus influence the conductivity.
| Original language | English |
|---|---|
| Pages (from-to) | 856-859 |
| Number of pages | 4 |
| Journal | Soviet physics. Semiconductors |
| Volume | 13 |
| Issue number | 8 ARug |
| Publication status | Published - 1979 |
| Externally published | Yes |
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ASJC Scopus subject areas
- Engineering(all)
Cite this
THEORY OF CHARGE TRANSPORT IN A SYSTEM OF PARTLY DISSOCIATED EXCITONS AND IMPURITY ATOMS. / Insepov, Z. A.; Norman, G. E.; Shchurova, L. Yu.
In: Soviet physics. Semiconductors, Vol. 13, No. 8 ARug, 1979, p. 856-859.Research output: Contribution to journal › Article
}
TY - JOUR
T1 - THEORY OF CHARGE TRANSPORT IN A SYSTEM OF PARTLY DISSOCIATED EXCITONS AND IMPURITY ATOMS.
AU - Insepov, Z. A.
AU - Norman, G. E.
AU - Shchurova, L. Yu
PY - 1979
Y1 - 1979
N2 - An analysis is made of the collisions of electrons and holes with impurity atoms and excitons. Approximate formulas are given for the description of the contribution of these processes to the conductivity and collision frequency. A comparison is made with the experimental data for germanium at helium temperatures. The influence of the anisotropy and the role of the nonadditivity of the scattering mechanisms are examined. It is shown that the interaction of charges with excitons may increase the equilibrium free-charge density and thus influence the conductivity.
AB - An analysis is made of the collisions of electrons and holes with impurity atoms and excitons. Approximate formulas are given for the description of the contribution of these processes to the conductivity and collision frequency. A comparison is made with the experimental data for germanium at helium temperatures. The influence of the anisotropy and the role of the nonadditivity of the scattering mechanisms are examined. It is shown that the interaction of charges with excitons may increase the equilibrium free-charge density and thus influence the conductivity.
UR - http://www.scopus.com/inward/record.url?scp=0018677993&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0018677993&partnerID=8YFLogxK
M3 - Article
VL - 13
SP - 856
EP - 859
JO - Semiconductors
JF - Semiconductors
SN - 1063-7826
IS - 8 ARug
ER -