THEORY OF CHARGE TRANSPORT IN A SYSTEM OF PARTLY DISSOCIATED EXCITONS AND IMPURITY ATOMS.

Z. A. Insepov; G. E. Norman; L. Yu Shchurova

THEORY OF CHARGE TRANSPORT IN A SYSTEM OF PARTLY DISSOCIATED EXCITONS AND IMPURITY ATOMS.

Z. A. Insepov, G. E. Norman, L. Yu Shchurova

Research output: Contribution to journal › Article › peer-review

Abstract

An analysis is made of the collisions of electrons and holes with impurity atoms and excitons. Approximate formulas are given for the description of the contribution of these processes to the conductivity and collision frequency. A comparison is made with the experimental data for germanium at helium temperatures. The influence of the anisotropy and the role of the nonadditivity of the scattering mechanisms are examined. It is shown that the interaction of charges with excitons may increase the equilibrium free-charge density and thus influence the conductivity.

Original language	English
Pages (from-to)	856-859
Number of pages	4
Journal	Soviet physics. Semiconductors
Volume	13
Issue number	8 ARug
Publication status	Published - Jan 1 1979
Externally published	Yes

ASJC Scopus subject areas

Engineering(all)

Access to Document

Fingerprint Dive into the research topics of 'THEORY OF CHARGE TRANSPORT IN A SYSTEM OF PARTLY DISSOCIATED EXCITONS AND IMPURITY ATOMS.'. Together they form a unique fingerprint.

Cite this

@article{78091998556c4f619311d569f753ce1a,

title = "THEORY OF CHARGE TRANSPORT IN A SYSTEM OF PARTLY DISSOCIATED EXCITONS AND IMPURITY ATOMS.",

abstract = "An analysis is made of the collisions of electrons and holes with impurity atoms and excitons. Approximate formulas are given for the description of the contribution of these processes to the conductivity and collision frequency. A comparison is made with the experimental data for germanium at helium temperatures. The influence of the anisotropy and the role of the nonadditivity of the scattering mechanisms are examined. It is shown that the interaction of charges with excitons may increase the equilibrium free-charge density and thus influence the conductivity.",

author = "Insepov, {Z. A.} and Norman, {G. E.} and Shchurova, {L. Yu}",

year = "1979",

month = jan,

day = "1",

language = "English",

volume = "13",

pages = "856--859",

journal = "Semiconductors",

issn = "1063-7826",

publisher = "Maik Nauka-Interperiodica Publishing",

number = "8 ARug",

}

TY - JOUR

T1 - THEORY OF CHARGE TRANSPORT IN A SYSTEM OF PARTLY DISSOCIATED EXCITONS AND IMPURITY ATOMS.

AU - Insepov, Z. A.

AU - Norman, G. E.

AU - Shchurova, L. Yu

PY - 1979/1/1

Y1 - 1979/1/1

N2 - An analysis is made of the collisions of electrons and holes with impurity atoms and excitons. Approximate formulas are given for the description of the contribution of these processes to the conductivity and collision frequency. A comparison is made with the experimental data for germanium at helium temperatures. The influence of the anisotropy and the role of the nonadditivity of the scattering mechanisms are examined. It is shown that the interaction of charges with excitons may increase the equilibrium free-charge density and thus influence the conductivity.

AB - An analysis is made of the collisions of electrons and holes with impurity atoms and excitons. Approximate formulas are given for the description of the contribution of these processes to the conductivity and collision frequency. A comparison is made with the experimental data for germanium at helium temperatures. The influence of the anisotropy and the role of the nonadditivity of the scattering mechanisms are examined. It is shown that the interaction of charges with excitons may increase the equilibrium free-charge density and thus influence the conductivity.

UR - http://www.scopus.com/inward/record.url?scp=0018677993&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0018677993&partnerID=8YFLogxK

M3 - Article

AN - SCOPUS:0018677993

VL - 13

SP - 856

EP - 859

JO - Semiconductors

JF - Semiconductors

SN - 1063-7826

IS - 8 ARug

ER -