TY - JOUR
T1 - Thermal rectification in novel two-dimensional hybrid graphene/BCN sheets: A molecular dynamics simulation
AU - Farzadian, Omid
AU - Yousefi, F.
AU - Shafiee, Mehdi
AU - Khoeini, Farhad
AU - Spitas, Christos
AU - Kostas, Konstantinos
PY - 2024/3/27
Y1 - 2024/3/27
N2 - The graphene-like monolayer of carbon, boron and nitrogen that maintains the native hexagonal atomic lattice (BCN), is a novel semiconductor with special thermal properties. Herein, with the aid of a non-equilibrium molecular dynamics approach (NEMD), we study phonon thermal rectification in a hybrid system of pure graphene and BCN (G-BCN) in various configurations under a series of positive and negative temperature gradients. We begin by investigating the relation of thermal rectification to sample’s mean temperature, T, and the imposed temperature difference, ΔΤ, between the two heat baths at its ends. We then move to explore the effect of varying strain levels of our sample on thermal rectification, followed by Kapitza resistance calculations at the G-BCN interface, which shed light on the interface effects on thermal rectification. Our simulation results reveal a BCN-configuration-dependent behavior of thermal rectification. Finally, the underlying mechanism leading to a preferred direction for phonons is studied using phonon density of states (DOS) on both sides of the G-BCN interface.
AB - The graphene-like monolayer of carbon, boron and nitrogen that maintains the native hexagonal atomic lattice (BCN), is a novel semiconductor with special thermal properties. Herein, with the aid of a non-equilibrium molecular dynamics approach (NEMD), we study phonon thermal rectification in a hybrid system of pure graphene and BCN (G-BCN) in various configurations under a series of positive and negative temperature gradients. We begin by investigating the relation of thermal rectification to sample’s mean temperature, T, and the imposed temperature difference, ΔΤ, between the two heat baths at its ends. We then move to explore the effect of varying strain levels of our sample on thermal rectification, followed by Kapitza resistance calculations at the G-BCN interface, which shed light on the interface effects on thermal rectification. Our simulation results reveal a BCN-configuration-dependent behavior of thermal rectification. Finally, the underlying mechanism leading to a preferred direction for phonons is studied using phonon density of states (DOS) on both sides of the G-BCN interface.
U2 - 10.1016/j.jmgm.2024.108763
DO - 10.1016/j.jmgm.2024.108763
M3 - Article
SN - 1093-3263
JO - Journal of Molecular Graphics and Modelling
JF - Journal of Molecular Graphics and Modelling
M1 - 108763
ER -